All Transistors. MJ802G Datasheet

 

MJ802G Datasheet and Replacement


   Type Designator: MJ802G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3
 

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MJ802G Datasheet (PDF)

 ..1. Size:70K  onsemi
mj802g.pdf pdf_icon

MJ802G

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V

 9.1. Size:136K  motorola
mj802rev.pdf pdf_icon

MJ802G

Order this documentMOTOROLAby MJ802/DSEMICONDUCTOR TECHNICAL DATAMJ802High-Power NPN Silicon30 AMPERETransistorPOWER TRANSISTORNPN SILICON. . . for use as an output device in complementary audio amplifiers to 100Watts100 VOLTSmusic power per channel.200 WATTS High DC Current Gain hFE = 25100 @ IC = 7.5 A Excellent Safe Operating Area Complement

 9.2. Size:41K  st
mj802.pdf pdf_icon

MJ802G

MJ802SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPEDESCRIPTION The MJ802 is a silicon Epitaxial-Base powertransistor mounted in Jedec TO-3 metal case. Itis intended for general purpose power amplifierand switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEO Collector-emitter Voltage (I

 9.3. Size:70K  onsemi
mj802.pdf pdf_icon

MJ802G

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V

Datasheet: MJ16018-1400V , MJ21193G , MJ21194G , MJ21195G , MJ21196G , MJ2955G , MJ3055 , MJ4502G , TIP3055 , MJ8100R , MJB41CG , MJB41CT4G , MJB42CT4G , MJB44H11G , MJB44H11T4 , MJB44H11T4-A , MJB44H11T4G .

History: 2N3636UB | 2SC2921 | 3DD128F_H3D | 3DD13001_A1 | DTB123YCA | 3DD13003_H1D | 2SC3357C

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