All Transistors. MJ802G Datasheet

 

MJ802G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJ802G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 200 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 90 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 30 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO3

 MJ802G Transistor Equivalent Substitute - Cross-Reference Search

   

MJ802G Datasheet (PDF)

 ..1. Size:70K  onsemi
mj802g.pdf

MJ802G
MJ802G

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V

 9.1. Size:136K  motorola
mj802rev.pdf

MJ802G
MJ802G

Order this documentMOTOROLAby MJ802/DSEMICONDUCTOR TECHNICAL DATAMJ802High-Power NPN Silicon30 AMPERETransistorPOWER TRANSISTORNPN SILICON. . . for use as an output device in complementary audio amplifiers to 100Watts100 VOLTSmusic power per channel.200 WATTS High DC Current Gain hFE = 25100 @ IC = 7.5 A Excellent Safe Operating Area Complement

 9.2. Size:41K  st
mj802.pdf

MJ802G
MJ802G

MJ802SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPEDESCRIPTION The MJ802 is a silicon Epitaxial-Base powertransistor mounted in Jedec TO-3 metal case. Itis intended for general purpose power amplifierand switching applications.12TO-3INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value UnitVCEO Collector-emitter Voltage (I

 9.3. Size:70K  onsemi
mj802.pdf

MJ802G
MJ802G

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V

 9.4. Size:70K  onsemi
mj802-d.pdf

MJ802G
MJ802G

MJ802High-Power NPN SiliconTransistorThis transistor is for use as an output device in complementary audioamplifiers to 100-Watts music power per channel.Features http://onsemi.com High DC Current Gain - hFE = 25-100 @ IC = 7.5 A30 AMPERE Excellent Safe Operating AreaPOWER TRANSISTOR Complement to the PNP MJ4502NPN SILICON Pb-Free Package is Available*100 V

 9.5. Size:111K  mospec
mj802.pdf

MJ802G
MJ802G

AAA

 9.6. Size:145K  inchange semiconductor
mj802.pdf

MJ802G
MJ802G

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 DESCRIPTION High DC Current Gain- : hFE= 25-100@IC= 7.5A Excellent Safe Operating Area Complement to Type MJ4502 APPLICATIONSDesigned for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PA

Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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