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MJB45H11G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJB45H11G
   Código: B45H11G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 50 W
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 230 pF
   Ganancia de corriente contínua (hfe): 40
   Paquete / Cubierta: TO-263
 

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MJB45H11G Datasheet (PDF)

 ..1. Size:152K  onsemi
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MJB45H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

 6.1. Size:113K  onsemi
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MJB45H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

 6.2. Size:64K  onsemi
mjb44h11 mjb45h11.pdf pdf_icon

MJB45H11G

MJB44H11 (NPN),MJB45H11 (PNP)Preferred DevicesComplementaryPower TransistorsD2PAK for Surface Mounthttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages in SILICON POWERapplications such as switching regulators, converters and powerTRANSISTORSamplifiers.10 AMPERES,Features80 VOLTS, 50

 6.3. Size:109K  onsemi
mjb44h11 njvmjb44h11 mjb45h11 njvmjb45h11.pdf pdf_icon

MJB45H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

Otros transistores... MJ8100R , MJB41CG , MJB41CT4G , MJB42CT4G , MJB44H11G , MJB44H11T4 , MJB44H11T4-A , MJB44H11T4G , BC557 , MJB45H11T4G , MJB5742T4G , MJD112-1G , MJD112G , MJD112RLG , MJD112T4G , MJD117-1G , MJD117G .

History: PEMD14 | MMUN2111LT2

 

 
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