MJB45H11G pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

MJB45H11G Specs and Replacement

Type Designator: MJB45H11G

SMD Transistor Code: B45H11G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 50 W

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 40 MHz

Collector Capacitance (Cc): 230 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO-263

MJB45H11G Substitution

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MJB45H11G datasheet

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MJB44H11 (NPN), NJVMJB44H11 (NPN), MJB45H11 (PNP), NJVMJB45H11 (PNP) Complementary http //onsemi.com Power Transistors SILICON POWER D2PAK for Surface Mount TRANSISTORS Complementary power transistors are for general purpose power 10 AMPERES, amplification and switching such as output or driver stages in 80 VOLTS, 50 WATTS applications such as switching regulators, converters and ... See More ⇒

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MJB44H11 (NPN), MJB45H11 (PNP) Preferred Devices Complementary Power Transistors D2PAK for Surface Mount http //onsemi.com Complementary power transistors are for general purpose power amplification and switching such as output or driver stages in SILICON POWER applications such as switching regulators, converters and power TRANSISTORS amplifiers. 10 AMPERES, Features 80 VOLTS, 50... See More ⇒

6.3. Size:109K onsemi

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