Биполярный транзистор MJB45H11G Даташит. Аналоги
Наименование производителя: MJB45H11G
Маркировка: B45H11G
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 40 MHz
Ёмкость коллекторного перехода (Cc): 230 pf
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO-263
MJB45H11G Datasheet (PDF)
mjb45h11g.pdf

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MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and
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MJB44H11 (NPN),MJB45H11 (PNP)Preferred DevicesComplementaryPower TransistorsD2PAK for Surface Mounthttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages in SILICON POWERapplications such as switching regulators, converters and powerTRANSISTORSamplifiers.10 AMPERES,Features80 VOLTS, 50
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MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and
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History: 2SA876 | BDP951 | KRC672U | 2N5373 | 40595 | BC858AWT1 | BCY70P
History: 2SA876 | BDP951 | KRC672U | 2N5373 | 40595 | BC858AWT1 | BCY70P



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