Справочник транзисторов. MJB45H11G

 

Биполярный транзистор MJB45H11G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJB45H11G
   Маркировка: B45H11G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 10 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 40 MHz
   Ёмкость коллекторного перехода (Cc): 230 pf
   Статический коэффициент передачи тока (hfe): 40
   Корпус транзистора: TO-263

 Аналоги (замена) для MJB45H11G

 

 

MJB45H11G Datasheet (PDF)

 ..1. Size:152K  onsemi
 mjb45h11g.pdf

MJB45H11G MJB45H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

 6.1. Size:113K  onsemi
 njvmjb44h11 njvmjb45h11.pdf

MJB45H11G MJB45H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

 6.2. Size:64K  onsemi
 mjb44h11 mjb45h11.pdf

MJB45H11G MJB45H11G

MJB44H11 (NPN),MJB45H11 (PNP)Preferred DevicesComplementaryPower TransistorsD2PAK for Surface Mounthttp://onsemi.comComplementary power transistors are for general purpose poweramplification and switching such as output or driver stages in SILICON POWERapplications such as switching regulators, converters and powerTRANSISTORSamplifiers.10 AMPERES,Features80 VOLTS, 50

 6.3. Size:109K  onsemi
 mjb44h11 njvmjb44h11 mjb45h11 njvmjb45h11.pdf

MJB45H11G MJB45H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

 6.4. Size:152K  onsemi
 mjb45h11t4g.pdf

MJB45H11G MJB45H11G

MJB44H11 (NPN),NJVMJB44H11 (NPN),MJB45H11 (PNP),NJVMJB45H11 (PNP)Complementaryhttp://onsemi.comPower TransistorsSILICON POWERD2PAK for Surface MountTRANSISTORSComplementary power transistors are for general purpose power10 AMPERES,amplification and switching such as output or driver stages in80 VOLTS, 50 WATTSapplications such as switching regulators, converters and

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