MJB5742T4G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MJB5742T4G
Código: B5742
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 8 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO-263
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MJB5742T4G Datasheet (PDF)
mjb5742t4g.pdf
MJB5742T4GNPN Silicon PowerDarlington TransistorsThe Darlington transistors are designed for high-voltage powerswitching in inductive circuits.Featureshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantPOWER DARLINGTONApplicationsTRANSISTORS Small Engine Ignition8 AMPERES, 400 VOLTS Switching Regulators100 WATTS Inverters Solenoid an
mjb5742.pdf
MJB5742T4GNPN Silicon PowerDarlington TransistorsThe Darlington transistors are designed for high-voltage powerswitching in inductive circuits.Featureshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantPOWER DARLINGTONApplicationsTRANSISTORS Small Engine Ignition8 AMPERES, 400 VOLTS Switching Regulators100 WATTS Inverters Solenoid an
Otros transistores... MJB41CT4G , MJB42CT4G , MJB44H11G , MJB44H11T4 , MJB44H11T4-A , MJB44H11T4G , MJB45H11G , MJB45H11T4G , 2SD1047 , MJD112-1G , MJD112G , MJD112RLG , MJD112T4G , MJD117-1G , MJD117G , MJD117T4G , MJD122G .
History: IDD1314 | BSS77
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BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
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