MJB5742T4G Datasheet. Specs and Replacement

Type Designator: MJB5742T4G  📄📄 

SMD Transistor Code: B5742

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO-263

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MJB5742T4G datasheet

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MJB5742T4G

MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high-voltage power switching in inductive circuits. Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant POWER DARLINGTON Applications TRANSISTORS Small Engine Ignition 8 AMPERES, 400 VOLTS Switching Regulators 100 WATTS Inverters Solenoid an... See More ⇒

 7.1. Size:133K  onsemi

 mjb5742.pdf pdf_icon

MJB5742T4G

MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high-voltage power switching in inductive circuits. Features http //onsemi.com These Devices are Pb-Free and are RoHS Compliant POWER DARLINGTON Applications TRANSISTORS Small Engine Ignition 8 AMPERES, 400 VOLTS Switching Regulators 100 WATTS Inverters Solenoid an... See More ⇒

Detailed specifications: MJB41CT4G, MJB42CT4G, MJB44H11G, MJB44H11T4, MJB44H11T4-A, MJB44H11T4G, MJB45H11G, MJB45H11T4G, 2N2222A, MJD112-1G, MJD112G, MJD112RLG, MJD112T4G, MJD117-1G, MJD117G, MJD117T4G, MJD122G

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