All Transistors. MJB5742T4G Datasheet

 

MJB5742T4G Datasheet and Replacement


   Type Designator: MJB5742T4G
   SMD Transistor Code: B5742
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 8 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO-263
 

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MJB5742T4G Datasheet (PDF)

 ..1. Size:132K  onsemi
 mjb5742t4g.pdf pdf_icon

MJB5742T4G

MJB5742T4GNPN Silicon PowerDarlington TransistorsThe Darlington transistors are designed for high-voltage powerswitching in inductive circuits.Featureshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantPOWER DARLINGTONApplicationsTRANSISTORS Small Engine Ignition8 AMPERES, 400 VOLTS Switching Regulators100 WATTS Inverters Solenoid an

 7.1. Size:133K  onsemi
 mjb5742.pdf pdf_icon

MJB5742T4G

MJB5742T4GNPN Silicon PowerDarlington TransistorsThe Darlington transistors are designed for high-voltage powerswitching in inductive circuits.Featureshttp://onsemi.com These Devices are Pb-Free and are RoHS CompliantPOWER DARLINGTONApplicationsTRANSISTORS Small Engine Ignition8 AMPERES, 400 VOLTS Switching Regulators100 WATTS Inverters Solenoid an

Datasheet: MJB41CT4G , MJB42CT4G , MJB44H11G , MJB44H11T4 , MJB44H11T4-A , MJB44H11T4G , MJB45H11G , MJB45H11T4G , 2SD1047 , MJD112-1G , MJD112G , MJD112RLG , MJD112T4G , MJD117-1G , MJD117G , MJD117T4G , MJD122G .

History: BCW99C

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