MJD128T4G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJD128T4G  📄📄 

Código: J128G

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 20 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 120 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 4 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 1000

Encapsulados: TO-252

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MJD128T4G datasheet

 ..1. Size:175K  onsemi
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MJD128T4G

MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo

 8.1. Size:91K  onsemi
 mjd128.pdf pdf_icon

MJD128T4G

MJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. www.onsemi.com Features Monolithic Construction With Built-in Base-Emitter Shunt Resistors SILICON High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTOR Epoxy Meets UL 94 V-0 @ 0.125 in

 8.2. Size:175K  onsemi
 njvmjd128.pdf pdf_icon

MJD128T4G

MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo

 8.3. Size:206K  inchange semiconductor
 mjd128.pdf pdf_icon

MJD128T4G

isc Silicon PNP Darlington Power Transistor MJD128 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching

MOSTRAR MÁS

Otros transistores... MJD112T4G, MJD117-1G, MJD117G, MJD117T4G, MJD122G, MJD122T4G, MJD127G, MJD127T4G, BD335, MJD148T4G, MJD200G, MJD200RLG, MJD200T4G, MJD210G, MJD210RLG, MJD210T4G, MJD243G