MJD128T4G - аналоги и даташиты биполярного транзистора

 

MJD128T4G - Даташиты. Аналоги. Основные параметры


   Наименование производителя: MJD128T4G
   Маркировка: J128G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 20 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Ёмкость коллекторного перехода (Cc): 300 pf
   Статический коэффициент передачи тока (hfe): 1000
   Корпус транзистора: TO-252

 Аналоги (замена) для MJD128T4G

 

MJD128T4G Datasheet (PDF)

 ..1. Size:175K  onsemi
 mjd128t4g.pdf pdf_icon

MJD128T4G

MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo

 8.1. Size:91K  onsemi
 mjd128.pdf pdf_icon

MJD128T4G

MJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. www.onsemi.com Features Monolithic Construction With Built-in Base-Emitter Shunt Resistors SILICON High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTOR Epoxy Meets UL 94 V-0 @ 0.125 in

 8.2. Size:175K  onsemi
 njvmjd128.pdf pdf_icon

MJD128T4G

MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo

 8.3. Size:206K  inchange semiconductor
 mjd128.pdf pdf_icon

MJD128T4G

isc Silicon PNP Darlington Power Transistor MJD128 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching

ПОКАЗАТЬ ЕЩЁ

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History: 2SC6120 | 2SA1204 | K2107A | MMUN2133LT1G | LDTA143EET1G | MMUN2131LT1G | AM83135-050

 

 
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