All Transistors. MJD128T4G Datasheet

 

MJD128T4G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MJD128T4G
   SMD Transistor Code: J128G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-252

 MJD128T4G Transistor Equivalent Substitute - Cross-Reference Search

   

MJD128T4G Datasheet (PDF)

 ..1. Size:175K  onsemi
mjd128t4g.pdf

MJD128T4G
MJD128T4G

MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

 8.1. Size:91K  onsemi
mjd128.pdf

MJD128T4G
MJD128T4G

MJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingapplications.www.onsemi.comFeatures Monolithic Construction With Built-in Base-Emitter Shunt ResistorsSILICON High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTOR Epoxy Meets UL 94 V-0 @ 0.125 in

 8.2. Size:175K  onsemi
njvmjd128.pdf

MJD128T4G
MJD128T4G

MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

 8.3. Size:206K  inchange semiconductor
mjd128.pdf

MJD128T4G
MJD128T4G

isc Silicon PNP Darlington Power Transistor MJD128DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)DPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2N6030

 

 
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