All Transistors. MJD128T4G Datasheet

 

MJD128T4G Datasheet and Replacement


   Type Designator: MJD128T4G
   SMD Transistor Code: J128G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-252

 MJD128T4G Transistor Equivalent Substitute - Cross-Reference Search

   

MJD128T4G Datasheet (PDF)

 ..1. Size:175K  onsemi
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MJD128T4G

MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo... See More ⇒

 8.1. Size:91K  onsemi
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MJD128T4G

MJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. www.onsemi.com Features Monolithic Construction With Built-in Base-Emitter Shunt Resistors SILICON High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc POWER TRANSISTOR Epoxy Meets UL 94 V-0 @ 0.125 in... See More ⇒

 8.2. Size:175K  onsemi
 njvmjd128.pdf pdf_icon

MJD128T4G

MJD128T4G, NJVMJD128T4G (PNP) Complementary Darlington Power Transistor DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching http //onsemi.com applications. SILICON Features POWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain hFE = 2500 (Typ) @ IC = 4.0 Adc 8 AMPERES Epo... See More ⇒

 8.3. Size:206K  inchange semiconductor
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MJD128T4G

isc Silicon PNP Darlington Power Transistor MJD128 DESCRIPTION High DC Current Gain- h = 1000(Min)@ I = -4A FE C Collector-Emitter Sustaining Voltage- V = -120V(Min) CEO(SUS) DPAK for Surface Mount Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching ... See More ⇒

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Datasheet: MJD112T4G , MJD117-1G , MJD117G , MJD117T4G , MJD122G , MJD122T4G , MJD127G , MJD127T4G , BD335 , MJD148T4G , MJD200G , MJD200RLG , MJD200T4G , MJD210G , MJD210RLG , MJD210T4G , MJD243G .

History: 2SC3751 | RN1607 | RN1706JE | 2SC3880 | RN2114MFV | RN1908FS | H1420

Keywords - MJD128T4G transistor datasheet

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