All Transistors. MJD128T4G Datasheet

 

MJD128T4G Datasheet and Replacement


   Type Designator: MJD128T4G
   SMD Transistor Code: J128G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 120 V
   Maximum Collector-Emitter Voltage |Vce|: 120 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 4 MHz
   Collector Capacitance (Cc): 300 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO-252
 

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MJD128T4G Datasheet (PDF)

 ..1. Size:175K  onsemi
 mjd128t4g.pdf pdf_icon

MJD128T4G

MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

 8.1. Size:91K  onsemi
 mjd128.pdf pdf_icon

MJD128T4G

MJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchingapplications.www.onsemi.comFeatures Monolithic Construction With Built-in Base-Emitter Shunt ResistorsSILICON High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 AdcPOWER TRANSISTOR Epoxy Meets UL 94 V-0 @ 0.125 in

 8.2. Size:175K  onsemi
 njvmjd128.pdf pdf_icon

MJD128T4G

MJD128T4G,NJVMJD128T4G (PNP)Complementary DarlingtonPower TransistorDPAK For Surface Mount ApplicationsDesigned for general purpose amplifier and low speed switchinghttp://onsemi.comapplications.SILICONFeaturesPOWER TRANSISTOR Monolithic Construction With Built-in Base-Emitter Shunt Resistors High DC Current Gain: hFE = 2500 (Typ) @ IC = 4.0 Adc8 AMPERES Epo

 8.3. Size:206K  inchange semiconductor
 mjd128.pdf pdf_icon

MJD128T4G

isc Silicon PNP Darlington Power Transistor MJD128DESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = -4AFE CCollector-Emitter Sustaining Voltage-: V = -120V(Min)CEO(SUS)DPAK for Surface Mount ApplicationsMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching

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Datasheet: MJD112T4G , MJD117-1G , MJD117G , MJD117T4G , MJD122G , MJD122T4G , MJD127G , MJD127T4G , TIP35C , MJD148T4G , MJD200G , MJD200RLG , MJD200T4G , MJD210G , MJD210RLG , MJD210T4G , MJD243G .

History: 2SA1419T-TD-E | NB111EJ | 2SD2029 | BFV85 | 2N2017 | 2SC4692 | START499ETR

Keywords - MJD128T4G transistor datasheet

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