MJD243T4G Datasheet. Equivalente

 ..1. Size:200K  onsemi
 mjd243t4g.pdf

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu

 8.1. Size:209K  motorola
 mjd243re.pdf

Order this document MOTOROLA by MJD243/D SEMICONDUCTOR TECHNICAL DATA Plastic Power Transistor MJD243* DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low power, high gain audio amplifier applications. NPN SILICON Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc POWER TRANSISTOR High DC Curr

 8.2. Size:200K  onsemi
 mjd243g.pdf

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu

 8.3. Size:107K  onsemi
 mjd243 mjd253.pdf

MJD243 (NPN), MJD253 (PNP) Complementary Silicon Plastic Power Transistors DPAK-3 for Surface Mount Applications www.onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. 4.0 A, 100 V, 12.5 W Features POWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY (No Suffix) COLLECTOR COLL

 8.4. Size:200K  onsemi
 njvmjd243 njvmjd253.pdf

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu

 8.5. Size:242K  inchange semiconductor
 mjd243.pdf

isc Silicon NPN Power Transistor MJD243 DESCRIPTION DC Current Gain- h = 40(Min) @ I = 0.2 A FE C Low Collector Saturation Voltage- V = 0.3V(Max.)@ I = 0.5 A CE(sat) C Complement to the PNP MJD253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low power audio amplifier and low-current, high-speed switching