All Transistors. MJD243T4G Datasheet

 

MJD243T4G Datasheet and Replacement


   Type Designator: MJD243T4G
   SMD Transistor Code: J243G
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 12.5 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 40 MHz
   Collector Capacitance (Cc): 50 pF
   Forward Current Transfer Ratio (hFE), MIN: 40
   Noise Figure, dB: -
   Package: TO-252

 MJD243T4G Transistor Equivalent Substitute - Cross-Reference Search

   

MJD243T4G Datasheet (PDF)

 ..1. Size:200K  onsemi
mjd243t4g.pdf pdf_icon

MJD243T4G

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu... See More ⇒

 8.1. Size:209K  motorola
mjd243re.pdf pdf_icon

MJD243T4G

Order this document MOTOROLA by MJD243/D SEMICONDUCTOR TECHNICAL DATA Plastic Power Transistor MJD243* DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low power, high gain audio amplifier applications. NPN SILICON Collector Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc POWER TRANSISTOR High DC Curr... See More ⇒

 8.2. Size:200K  onsemi
mjd243g.pdf pdf_icon

MJD243T4G

MJD243, NJVMJD243T4G (NPN), MJD253, NJVMJD253T4G (PNP) Complementary Silicon http //onsemi.com Plastic Power Transistor DPAK-3 for Surface Mount Applications 4.0 A, 100 V, 12.5 W POWER TRANSISTOR Designed for low voltage, low-power, high-gain audio amplifier applications. Features Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) @ IC = 10 mAdc High DC Cu... See More ⇒

 8.3. Size:107K  onsemi
mjd243 mjd253.pdf pdf_icon

MJD243T4G

MJD243 (NPN), MJD253 (PNP) Complementary Silicon Plastic Power Transistors DPAK-3 for Surface Mount Applications www.onsemi.com Designed for low voltage, low-power, high-gain audio amplifier applications. 4.0 A, 100 V, 12.5 W Features POWER TRANSISTOR High DC Current Gain Lead Formed for Surface Mount Applications in Plastic Sleeves COMPLEMENTARY (No Suffix) COLLECTOR COLL... See More ⇒

Datasheet: MJD148T4G , MJD200G , MJD200RLG , MJD200T4G , MJD210G , MJD210RLG , MJD210T4G , MJD243G , TIP31 , MJD253-1G , MJD253T4G , MJD2955-1G , MJD2955G , MJD2955T4G , MJD3055G , MJD3055T4G , MJD31C1G .

History: JE5401C | 2SD344 | K2118A | 2SC3524 | BUPD1520 | 2SC3815 | 2SC3507

Keywords - MJD243T4G transistor datasheet

 MJD243T4G cross reference
 MJD243T4G equivalent finder
 MJD243T4G lookup
 MJD243T4G substitution
 MJD243T4G replacement

 

 
Back to Top

 


 
.