MJD5731T4G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MJD5731T4G  📄📄 

Código: J5731G

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO-252

 Búsqueda de reemplazo de MJD5731T4G

- Selecciónⓘ de transistores por parámetros

 

MJD5731T4G datasheet

 ..1. Size:123K  onsemi
 mjd5731t4g.pdf pdf_icon

MJD5731T4G

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications. http //onsemi.com Features 350 V (Min) - VCEO(sus) SILICON 1.0 A Rated Collector Current POWER TRANSISTORS PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in 1.0 AMPERE

 7.1. Size:114K  onsemi
 mjd5731-d.pdf pdf_icon

MJD5731T4G

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications. http //onsemi.com Features 350 V (Min) - VCEO(sus) SILICON 1.0 A Rated Collector Current POWER TRANSISTORS PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in 1.0 AMPERE

 7.2. Size:128K  onsemi
 mjd5731.pdf pdf_icon

MJD5731T4G

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features http //onsemi.com PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in SILICON These Devices are Pb-Free and are RoHS Compliant POWER TRANSISTORS 1.0 AMPERE MAXIMUM RATI

 7.3. Size:222K  inchange semiconductor
 mjd5731.pdf pdf_icon

MJD5731T4G

isc Silicon PNP Power Transistor MJD5731 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -350V(Min) CEO(SUS) High Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications. ABSOLUTE MAXIMUM RATINGS(T

MOSTRAR MÁS

Otros transistores... MJD45H11G, MJD45H11RLG, MJD45H11T4-A, MJD45H11T4G, MJD47G, MJD47T4G, MJD50G, MJD50T4G, BDT88, MJD6039T4G, MM420, MM421, MMBR571L, MMBR901L, MMBR911L, MMBR920L, MMBR931L