MJD5731T4G Datasheet. Specs and Replacement

Type Designator: MJD5731T4G  📄📄 

SMD Transistor Code: J5731G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 15 W

Maximum Collector-Emitter Voltage |Vce|: 350 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO-252

 MJD5731T4G Substitution

- BJT ⓘ Cross-Reference Search

 

MJD5731T4G datasheet

 ..1. Size:123K  onsemi

mjd5731t4g.pdf pdf_icon

MJD5731T4G

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications. http //onsemi.com Features 350 V (Min) - VCEO(sus) SILICON 1.0 A Rated Collector Current POWER TRANSISTORS PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in 1.0 AMPERE ... See More ⇒

 7.1. Size:114K  onsemi

mjd5731-d.pdf pdf_icon

MJD5731T4G

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications. http //onsemi.com Features 350 V (Min) - VCEO(sus) SILICON 1.0 A Rated Collector Current POWER TRANSISTORS PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in 1.0 AMPERE ... See More ⇒

 7.2. Size:128K  onsemi

mjd5731.pdf pdf_icon

MJD5731T4G

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features http //onsemi.com PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in SILICON These Devices are Pb-Free and are RoHS Compliant POWER TRANSISTORS 1.0 AMPERE MAXIMUM RATI... See More ⇒

 7.3. Size:222K  inchange semiconductor

mjd5731.pdf pdf_icon

MJD5731T4G

isc Silicon PNP Power Transistor MJD5731 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -350V(Min) CEO(SUS) High Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications. ABSOLUTE MAXIMUM RATINGS(T ... See More ⇒

Detailed specifications: MJD45H11G, MJD45H11RLG, MJD45H11T4-A, MJD45H11T4G, MJD47G, MJD47T4G, MJD50G, MJD50T4G, BDT88, MJD6039T4G, MM420, MM421, MMBR571L, MMBR901L, MMBR911L, MMBR920L, MMBR931L

Keywords - MJD5731T4G pdf specs

 MJD5731T4G cross reference

 MJD5731T4G equivalent finder

 MJD5731T4G pdf lookup

 MJD5731T4G substitution

 MJD5731T4G replacement