MJD5731T4G datasheet, аналоги, основные параметры

Наименование производителя: MJD5731T4G  📄📄 

Маркировка: J5731G

Тип материала: Si

Полярность: PNP

Предельные значения

Максимальная рассеиваемая мощность (Pc): 15 W

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 350 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 1 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 10 MHz

Статический коэффициент передачи тока (hFE): 30

Корпус транзистора: TO-252

 Аналоги (замена) для MJD5731T4G

- подборⓘ биполярного транзистора по параметрам

 

MJD5731T4G даташит

 ..1. Size:123K  onsemi
 mjd5731t4g.pdf pdf_icon

MJD5731T4G

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications. http //onsemi.com Features 350 V (Min) - VCEO(sus) SILICON 1.0 A Rated Collector Current POWER TRANSISTORS PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in 1.0 AMPERE

 7.1. Size:114K  onsemi
 mjd5731-d.pdf pdf_icon

MJD5731T4G

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODEt power supply drivers and other switching applications. http //onsemi.com Features 350 V (Min) - VCEO(sus) SILICON 1.0 A Rated Collector Current POWER TRANSISTORS PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in 1.0 AMPERE

 7.2. Size:128K  onsemi
 mjd5731.pdf pdf_icon

MJD5731T4G

MJD5731 High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features http //onsemi.com PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in SILICON These Devices are Pb-Free and are RoHS Compliant POWER TRANSISTORS 1.0 AMPERE MAXIMUM RATI

 7.3. Size:222K  inchange semiconductor
 mjd5731.pdf pdf_icon

MJD5731T4G

isc Silicon PNP Power Transistor MJD5731 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -350V(Min) CEO(SUS) High Switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for line operated audio output amplifier SWITCHMODE power supply drivers and other switching applications. ABSOLUTE MAXIMUM RATINGS(T

ПОКАЗАТЬ ЕЩЁ

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