Справочник транзисторов. MJD5731T4G

 

Биполярный транзистор MJD5731T4G - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MJD5731T4G
   Маркировка: J5731G
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 15 W
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 350 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 10 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO-252

 Аналоги (замена) для MJD5731T4G

 

 

MJD5731T4G Datasheet (PDF)

 ..1. Size:123K  onsemi
mjd5731t4g.pdf

MJD5731T4G
MJD5731T4G

MJD5731High Voltage PNP SiliconPower TransistorsDesigned for line operated audio output amplifier,SWITCHMODEt power supply drivers and other switchingapplications.http://onsemi.comFeatures 350 V (Min) - VCEO(sus)SILICON 1.0 A Rated Collector CurrentPOWER TRANSISTORS PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in 1.0 AMPERE

 7.1. Size:114K  onsemi
mjd5731-d.pdf

MJD5731T4G
MJD5731T4G

MJD5731High Voltage PNP SiliconPower TransistorsDesigned for line operated audio output amplifier,SWITCHMODEt power supply drivers and other switchingapplications.http://onsemi.comFeatures 350 V (Min) - VCEO(sus)SILICON 1.0 A Rated Collector CurrentPOWER TRANSISTORS PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in 1.0 AMPERE

 7.2. Size:128K  onsemi
mjd5731.pdf

MJD5731T4G
MJD5731T4G

MJD5731High Voltage PNP SiliconPower TransistorsDesigned for line operated audio output amplifier, SWITCHMODEpower supply drivers and other switching applications.Featureshttp://onsemi.com PNP Complements to the MJD47 thru MJD50 Series Epoxy Meets UL 94 V-0 @ 0.125 in SILICON These Devices are Pb-Free and are RoHS CompliantPOWER TRANSISTORS1.0 AMPEREMAXIMUM RATI

 7.3. Size:222K  inchange semiconductor
mjd5731.pdf

MJD5731T4G
MJD5731T4G

isc Silicon PNP Power Transistor MJD5731DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -350V(Min)CEO(SUS)High Switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for line operated audio output amplifierSWITCHMODE power supply drivers and otherswitching applications.ABSOLUTE MAXIMUM RATINGS(T

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