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MMBT3904LT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT3904LT1G
   Código: 1AM
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 4 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-23
 

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MMBT3904LT1G PDF detailed specifications

 ..1. Size:131K  onsemi
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MMBT3904LT1G

MMBT3904L, SMMBT3904L General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR 3 Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 Collector-Emi... See More ⇒

 3.1. Size:164K  motorola
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MMBT3904LT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT3904LT1/D General Purpose Transistor MMBT3904LT1 NPN Silicon COLLECTOR Motorola Preferred Device 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit CASE 318 08, STYLE 6 Collector Emitter Voltage VCEO 40 Vdc SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VE... See More ⇒

 3.2. Size:114K  onsemi
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MMBT3904LT1G

MMBT3904LT1G General Purpose Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 Collector-Emitter Voltage VCEO 40 Vdc BASE Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc 2 EMITTER Collector Current - Continuous IC 200 mAdc Coll... See More ⇒

 3.3. Size:1617K  lge
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MMBT3904LT1G

MMBT3904LT1 NPN SWITCHING TRANSISTOR 1. BASE 2. EMITTER 3. COLLECTOR FEATURES A Epitaxial planar die construction. SOT-23 E Complementary PNP type available Dim Min Max A 2.70 3.10 K B (MMBT3906). B 1.10 1.50 C 1.0 Typical Collector Current Capability ICM =200mA. D 0.4 Typical J D E 0.35 0.48 Collector-emitter Voltage VCEO=40V. G G 1.80 2.00 H 0.02 0.1 H ... See More ⇒

Otros transistores... MMBT2907AWT1G , MMBT2907-G , MMBT3416LT3G , MMBT3904FA , MMBT3904FZ , MMBT3904-G , MMBT3904GH , MMBT3904-HF , BC558 , MMBT3904LT3G , MMBT3904LTG , MMBT3904M , MMBT3904SL , MMBT3904TT1G , MMBT3904WG , MMBT3904WGH , MMBT3904WT1G .

 

 
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