MMBT3904LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT3904LT1G
SMD Transistor Code: 1AM
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.2 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-23
MMBT3904LT1G Transistor Equivalent Substitute - Cross-Reference Search
MMBT3904LT1G Datasheet (PDF)
mmbt3904lt1g.pdf
MMBT3904L, SMMBT3904LGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant S Prefix for Automotive and Other Applications Requiring Unique COLLECTOR3Site and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable1BASEMAXIMUM RATINGSRating Symbol Value Unit2Collector-Emi
mmbt3904lt1rev1d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT3904LT1/DGeneral Purpose TransistorMMBT3904LT1NPN SiliconCOLLECTOR Motorola Preferred Device31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCASE 31808, STYLE 6CollectorEmitter Voltage VCEO 40 VdcSOT23 (TO236AB)CollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VE
mmbt3904lt1-d.pdf
MMBT3904LT1GGeneral Purpose TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1Collector-Emitter Voltage VCEO 40 VdcBASECollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 Vdc 2EMITTERCollector Current - Continuous IC 200 mAdcColl
mmbt3904lt1.pdf
MMBT3904LT1 NPN SWITCHING TRANSISTOR1. BASE 2. EMITTER3. COLLECTORFEATURES A Epitaxial planar die construction. SOT-23 E Complementary PNP type available Dim Min MaxA 2.70 3.10K B(MMBT3906). B 1.10 1.50C 1.0 Typical Collector Current Capability ICM =200mA. D 0.4 TypicalJDE 0.35 0.48 Collector-emitter Voltage VCEO=40V. GG 1.80 2.00H 0.02 0.1H
mmbt3904lt1.pdf
FM120-M WILLASMMBT3904LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.RoHS product for packing code suffix "G", SOD-123H Low profile surfa
mmbt3904lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT3904LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.2 W (Tamb=25) 1. 3 Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range Unit: mm TJ, Ts
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC1627 | MMBT4916 | FGT3055 | 2SA23
History: 2SC1627 | MMBT4916 | FGT3055 | 2SA23
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