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MMBT5401-G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT5401-G
   Código: 2L
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 160 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-23
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MMBT5401-G Datasheet (PDF)

 ..1. Size:92K  comchip
 mmbt5401-g.pdf pdf_icon

MMBT5401-G

General Purpose TransistorMMBT5401-G (PNP)RoHS DeviceSOT-23Features -Epitaxial planar die construction.0.119(3.00)0.110(2.80) -Complementary NPN type available (MMBT5551-G).3 -Ideal for medium power amplification and switching.0.056(1.40)0.047(1.20)1 2Diagram: 0.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.0

 5.1. Size:950K  semtech
 mmbt5401-haf.pdf pdf_icon

MMBT5401-G

MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) aParameter Symbol Value Unit Collector Base Voltage -V 160 V CBOCollector Emitter Voltage -V 150 V CEOEmitt

 5.2. Size:4192K  msksemi
 mmbt5401-ms.pdf pdf_icon

MMBT5401-G

www.msksemi.comMMBT5401-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching1. BASEMARKING: 2L 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emit

 5.3. Size:434K  powersilicon
 mmbt5401-t3 mmbt5401g-t3.pdf pdf_icon

MMBT5401-G

MMBT5401GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability: MIL-STD-202, Method 208 PB Free Products Are Available: 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA

MOSTRAR MÁS

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: TN3467 | BFS91A

 

 
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