All Transistors. MMBT5401-G Datasheet

 

MMBT5401-G Datasheet and Replacement


   Type Designator: MMBT5401-G
   SMD Transistor Code: 2L
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23
 

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MMBT5401-G Datasheet (PDF)

 ..1. Size:92K  comchip
mmbt5401-g.pdf pdf_icon

MMBT5401-G

General Purpose TransistorMMBT5401-G (PNP)RoHS DeviceSOT-23Features -Epitaxial planar die construction.0.119(3.00)0.110(2.80) -Complementary NPN type available (MMBT5551-G).3 -Ideal for medium power amplification and switching.0.056(1.40)0.047(1.20)1 2Diagram: 0.006(0.15)0.079(2.00)Collector0.002(0.05)0.071(1.80)30.041(1.05) 0.100(2.55)0.035(0.90) 0.0

 5.1. Size:950K  semtech
mmbt5401-haf.pdf pdf_icon

MMBT5401-G

MMBT5401-HAF PNP Silicon Epitaxial Planar Transistor Features Halogen and Antimony Free(HAF), RoHS compliant 1. Base 2. Emitter 3. Collector TO-236 Plastic Package Applications For high voltage amplifier applications Absolute Maximum Ratings (T = 25 ) aParameter Symbol Value Unit Collector Base Voltage -V 160 V CBOCollector Emitter Voltage -V 150 V CEOEmitt

 5.2. Size:4192K  msksemi
mmbt5401-ms.pdf pdf_icon

MMBT5401-G

www.msksemi.comMMBT5401-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (PNP)FEATURES Complementary to MMBT5551-MS Ideal for Medium Power Amplification and Switching1. BASEMARKING: 2L 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -160 V VCEO Collector-Emit

 5.3. Size:434K  powersilicon
mmbt5401-t3 mmbt5401g-t3.pdf pdf_icon

MMBT5401-G

MMBT5401GENERAL PURPOSE TRANSISTORS PNP Silicon FEATURES High DC Current Gain Low Collector-Emitter Saturation Voltage C MECHANICAL DATA E Available in SOT-23Package Solderability: MIL-STD-202, Method 208 PB Free Products Are Available: 98.5% SN B Above Can Meet RoHS Environment Substance Directive Request ORDERING INFORMATION PART NUMBER PA

Datasheet: MMBT5087LT1G , MMBT5088LT1G , MMBT5089LT1G , MMBT5210 , MMBT5343-G , MMBT5343-L , MMBT5343-O , MMBT5343-Y , BD136 , MMBT5401GH , MMBT5401LT1G , MMBT5401WT1G , MMBT5550GH , MMBT5550LT1G , MMBT5551GH , MMBT5551LT1G , MMBT5551M3 .

History: STH1061 | BUT18 | TSA114ENND03 | 2SC4134S | TA2458 | BDW43 | BUT211

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