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MMBT6521LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT6521LT1G
   Código: RO
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 25 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 3.5 pF
   Ganancia de corriente contínua (hfe): 300
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar MMBT6521LT1G

 

MMBT6521LT1G Datasheet (PDF)

 ..1. Size:295K  onsemi
mmbt6521lt1g.pdf

MMBT6521LT1G
MMBT6521LT1G

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 ..2. Size:244K  onsemi
mmbt6521lt1g smmbt6521lt1g.pdf

MMBT6521LT1G
MMBT6521LT1G

MMBT6521LT1G,SMMBT6521LT1GAmplifier TransistorNPN SiliconFeatureswww.onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantSOT- 23 (TO -236)CASE 318 -08STYLE 6MAXIMUM RATINGSCOLLECTORRating Symbol

 3.1. Size:289K  onsemi
mmbt6521lt1.pdf

MMBT6521LT1G
MMBT6521LT1G

MMBT6521LT1GAmplifier TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit1BASECollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 40 Vdc2Emitter-Base Voltage VEBO 4.0 VdcEMITTERCollector Current Continuous IC 100 mAdcTHERMAL

 7.1. Size:231K  motorola
mmbt6520.pdf

MMBT6521LT1G
MMBT6521LT1G

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT6520LT1/DHigh Voltage TransistorMMBT6520LT1PNP SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 6SOT23 (TO236AB)CollectorEmitter Voltage VCEO 350 VdcCollectorBase Voltage VCBO 350 VdcEmitterBase Volt

 7.2. Size:123K  onsemi
nsvmmbt6520lt1g.pdf

MMBT6521LT1G
MMBT6521LT1G

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC

 7.3. Size:196K  onsemi
mmbt6520l nsvmmbt6520l.pdf

MMBT6521LT1G
MMBT6521LT1G

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconwww.onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitColl

 7.4. Size:116K  onsemi
mmbt6520lt1-d.pdf

MMBT6521LT1G
MMBT6521LT1G

MMBT6520LT1GHigh Voltage TransistorPNP SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO -350 VdcCollector-Base Voltage VCBO -350 Vdc2EMITTEREmitter-Base Voltage VEBO -5.0 VdcBase Current IB -250 mACollector Current -

 7.5. Size:123K  onsemi
mmbt6520lt1g.pdf

MMBT6521LT1G
MMBT6521LT1G

MMBT6520L,NSVMMBT6520LHigh Voltage TransistorPNP Siliconhttp://onsemi.comFeatures NSV Prefix for Automotive and Other Applications RequiringCOLLECTORUnique Site and Control Change Requirements; AEC-Q1013Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2EMITTERMAXIMUM RATINGSRating Symbol Value UnitC

 7.6. Size:1328K  kexin
mmbt6520.pdf

MMBT6521LT1G
MMBT6521LT1G

SMD Type TransistorsPNP TransistorsMMBT6520 (KMBT6520)SOT-23Unit: mm2.9+0.1-0.1+0.10.4 -0.13 Features Collector-Emitter Voltage: VCEO= -350V High Voltage Transistor1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.13COLLECTOR1.Base12.EmitterBASE3.collector2EMITTER Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Co

 7.7. Size:241K  inchange semiconductor
mmbt6520l.pdf

MMBT6521LT1G
MMBT6521LT1G

isc Silicon PNP Power Transistors MMBT6520LDESCRIPTIONCollector-Emitter Saturation Voltage-: V = -0.3V(Max.)@I = -0.01ACE(sat) CCollector-Emitter Breakdown Voltage-: V = -350V(Min)(BR) CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay drivers,lamp drivers,motor driversABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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