MMBT6521LT1G Datasheet. Specs and Replacement
Type Designator: MMBT6521LT1G 📄📄
SMD Transistor Code: RO
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 3.5 pF
Forward Current Transfer Ratio (hFE), MIN: 300
Noise Figure, dB: -
Package: SOT-23
MMBT6521LT1G Substitution
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MMBT6521LT1G datasheet
..1. Size:295K onsemi
mmbt6521lt1g.pdf 

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..2. Size:244K onsemi
mmbt6521lt1g smmbt6521lt1g.pdf 

MMBT6521LT1G, SMMBT6521LT1G Amplifier Transistor NPN Silicon Features www.onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SOT- 23 (TO -236) CASE 318 -08 STYLE 6 MAXIMUM RATINGS COLLECTOR Rating Symbol... See More ⇒
3.1. Size:289K onsemi
mmbt6521lt1.pdf 

MMBT6521LT1G Amplifier Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit 1 BASE Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 40 Vdc 2 Emitter-Base Voltage VEBO 4.0 Vdc EMITTER Collector Current Continuous IC 100 mAdc THERMAL... See More ⇒
7.1. Size:231K motorola
mmbt6520.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT6520LT1/D High Voltage Transistor MMBT6520LT1 PNP Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Emitter Voltage VCEO 350 Vdc Collector Base Voltage VCBO 350 Vdc Emitter Base Volt... See More ⇒
7.2. Size:123K onsemi
nsvmmbt6520lt1g.pdf 

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C... See More ⇒
7.3. Size:196K onsemi
mmbt6520l nsvmmbt6520l.pdf 

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon www.onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Coll... See More ⇒
7.4. Size:116K onsemi
mmbt6520lt1-d.pdf 

MMBT6520LT1G High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO -350 Vdc Collector-Base Voltage VCBO -350 Vdc 2 EMITTER Emitter-Base Voltage VEBO -5.0 Vdc Base Current IB -250 mA Collector Current - ... See More ⇒
7.5. Size:123K onsemi
mmbt6520lt1g.pdf 

MMBT6520L, NSVMMBT6520L High Voltage Transistor PNP Silicon http //onsemi.com Features NSV Prefix for Automotive and Other Applications Requiring COLLECTOR Unique Site and Control Change Requirements; AEC-Q101 3 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 1 BASE Compliant 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit C... See More ⇒
7.6. Size:1328K kexin
mmbt6520.pdf 

SMD Type Transistors PNP Transistors MMBT6520 (KMBT6520) SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4 -0.1 3 Features Collector-Emitter Voltage VCEO= -350V High Voltage Transistor 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 3 COLLECTOR 1.Base 1 2.Emitter BASE 3.collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Co... See More ⇒
7.7. Size:241K inchange semiconductor
mmbt6520l.pdf 

isc Silicon PNP Power Transistors MMBT6520L DESCRIPTION Collector-Emitter Saturation Voltage- V = -0.3V(Max.)@I = -0.01A CE(sat) C Collector-Emitter Breakdown Voltage- V = -350V(Min) (BR) CEO Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers,lamp drivers,motor drivers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO... See More ⇒
Detailed specifications: MMBT5962, MMBT6427LT1G, MMBT6428LT1, MMBT6428LT1G, MMBT6429LT1G, MMBT6515, MMBT6517LT1G, MMBT6520LT1G, 2N3055, MMBT720, MMBT8050, MMBT8050D, MMBT8050LT1, MMBT8099LT1G, MMBT8550, MMBT8550LT1, MMBT9012LT1
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