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MMBT720 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT720
   Código: 720
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 25 pF
   Ganancia de corriente contínua (hfe): 12
   Paquete / Cubierta: SOT-23
 
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MMBT720 Datasheet (PDF)

 ..1. Size:74K  secos
mmbt720.pdf pdf_icon

MMBT720

MMBT720 -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES General Purpose Amplifier Applications A Switching transistor L3 Extremely low saturation voltage 3 Complementary NPN type: MMBT619 Top View C B11 22K EAPPLICATION Gate Driving MOSFE

 9.1. Size:701K  semtech
mmbt7002kw.pdf pdf_icon

MMBT720

MMBT7002KW N-Channel Enhancement Mode Field Effect Transistor DrainFeatures Low on resistance RDS(ON) Low gate threshold voltage Gate Low input capacitance ESD protected up to 2KV 1.Gate 2.Source 3.DrainSourceSOT-323 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS

 9.2. Size:176K  semtech
mmbt7002k.pdf pdf_icon

MMBT720

MMBT7002K N-Channel Enhancement Mode Field Effect Transistor DrainFeatures Low on resistance RDS(ON) Low gate threshold voltage Gate Low input capacitance ESD protected up to 2KV 1.Gate 2.Source 3.DrainSourceTO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS

 9.3. Size:757K  semtech
mmbt7002e.pdf pdf_icon

MMBT720

MMBT7002E N-Channel Enhancement Mode Field Effect Transistor DrainGate1. Gate 2. Source 3. Drain SOT-523 Plastic Package SourceOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage (RGS 1 M) VDGR 60 VContinuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115 mA Drain Current ID

Otros transistores... MMBT6427LT1G , MMBT6428LT1 , MMBT6428LT1G , MMBT6429LT1G , MMBT6515 , MMBT6517LT1G , MMBT6520LT1G , MMBT6521LT1G , 2N3904 , MMBT8050 , MMBT8050D , MMBT8050LT1 , MMBT8099LT1G , MMBT8550 , MMBT8550LT1 , MMBT9012LT1 , MMBT9013LT1 .

History: 2N3021 | STD13003D

 

 
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