Биполярный транзистор MMBT720 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MMBT720
Маркировка: 720
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 25 pf
Статический коэффициент передачи тока (hfe): 12
Корпус транзистора: SOT-23
MMBT720 Datasheet (PDF)
mmbt720.pdf
MMBT720 -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES General Purpose Amplifier Applications A Switching transistor L3 Extremely low saturation voltage 3 Complementary NPN type: MMBT619 Top View C B11 22K EAPPLICATION Gate Driving MOSFE
mmbt7002kw.pdf
MMBT7002KW N-Channel Enhancement Mode Field Effect Transistor DrainFeatures Low on resistance RDS(ON) Low gate threshold voltage Gate Low input capacitance ESD protected up to 2KV 1.Gate 2.Source 3.DrainSourceSOT-323 Plastic PackageAbsolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS
mmbt7002k.pdf
MMBT7002K N-Channel Enhancement Mode Field Effect Transistor DrainFeatures Low on resistance RDS(ON) Low gate threshold voltage Gate Low input capacitance ESD protected up to 2KV 1.Gate 2.Source 3.DrainSourceTO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS
mmbt7002e.pdf
MMBT7002E N-Channel Enhancement Mode Field Effect Transistor DrainGate1. Gate 2. Source 3. Drain SOT-523 Plastic Package SourceOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage (RGS 1 M) VDGR 60 VContinuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115 mA Drain Current ID
mmbt7002w.pdf
MMBT7002W N-Channel Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain SOT-323 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage (RGS 1 M) VDGR 60 VContinuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115 mA Drain Current ID Pulsed 800 Total Powe
mmbt7002vw.pdf
MMBT7002VW N-Channel Enhancement Mode Field Effect Transistor Features Drain Low on resistance RDS(ON) Low gate threshold voltage Low input capacitance Gate ESD protected up to 1KV SourceOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltage VDSS 60 VGate-Source Voltage VGSS 20 VDrain Current (Continuous) ID 300 mAD
mmbt7002dw.pdf
MMBT7002DW N-Channel Enhancement Mode Field Effect Transistor 6 5 4TR2TR11.Source 2. Gate 3. Drain 1 2 34. Source 5. Gate 6. DrainSOT-363 Plastic Package Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitDrain Source Voltage VDSS 60 VDrain Gate Voltage (RGS 1 M) VDGR 60 VContinuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115
mmbt7002.pdf
MMBT7002 N-Channel Enhancement Mode Field Effect Transistor DrainFeatures High density cell design for low RDS(ON) Voltage controlled small signal switching High saturation current capability Gate High speed switching Source 1.Gate 2.Source 3.DrainTO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitDrain-Source Voltag
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
