MMBT720 - Даташиты. Аналоги. Основные параметры

MMBT720 -1.5A , -40V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES General Purpose Amplifier Applications A Switching transistor L 3 Extremely low saturation voltage 3 Complementary NPN type MMBT619 Top View C B 1 1 2 2 K E APPLICATION Gate Driving MOSFE

MMBT7002KW N-Channel Enhancement Mode Field Effect Transistor Drain Features Low on resistance RDS(ON) Low gate threshold voltage Gate Low input capacitance ESD protected up to 2KV 1.Gate 2.Source 3.Drain Source SOT-323 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS

MMBT7002K N-Channel Enhancement Mode Field Effect Transistor Drain Features Low on resistance RDS(ON) Low gate threshold voltage Gate Low input capacitance ESD protected up to 2KV 1.Gate 2.Source 3.Drain Source TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS

MMBT7002E N-Channel Enhancement Mode Field Effect Transistor Drain Gate 1. Gate 2. Source 3. Drain SOT-523 Plastic Package Source O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage (RGS 1 M ) VDGR 60 V Continuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115 mA Drain Current ID

MMBT7002W N-Channel Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain SOT-323 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage (RGS 1 M ) VDGR 60 V Continuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115 mA Drain Current ID Pulsed 800 Total Powe

MMBT7002VW N-Channel Enhancement Mode Field Effect Transistor Features Drain Low on resistance RDS(ON) Low gate threshold voltage Low input capacitance Gate ESD protected up to 1KV Source O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS 20 V Drain Current (Continuous) ID 300 mA D

MMBT7002DW N-Channel Enhancement Mode Field Effect Transistor 6 5 4 TR2 TR1 1.Source 2. Gate 3. Drain 1 2 3 4. Source 5. Gate 6. Drain SOT-363 Plastic Package Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Drain Source Voltage VDSS 60 V Drain Gate Voltage (RGS 1 M ) VDGR 60 V Continuous 20 V Gate Source Voltage VGSS Pulsed 40 Continuous 115

MMBT7002 N-Channel Enhancement Mode Field Effect Transistor Drain Features High density cell design for low RDS(ON) Voltage controlled small signal switching High saturation current capability Gate High speed switching Source 1.Gate 2.Source 3.Drain TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Drain-Source Voltag