MMBT9014LT1 Todos los transistores

 

MMBT9014LT1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBT9014LT1
   Código: L6
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.225 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 150 MHz
   Capacitancia de salida (Cc): 2.2 pF
   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: SOT-23

 Búsqueda de reemplazo de transistor bipolar MMBT9014LT1

 

MMBT9014LT1 Datasheet (PDF)

 ..1. Size:136K  wej
 mmbt9014lt1.pdf pdf_icon

MMBT9014LT1

RoHS MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 PRF-AMPLIFIER,LOW LEVEL&LOW NOISE 1 Complemen to MMPT9015LT1 Collector-current Ic=100mA 2 Collector-Emiller Voltage VCE=45V 1. 1.BASE High Totalpower Dissipation Pc=225mW 2.EMITTER High life And Good Linearity 2.4 3.COLLECTOR 1.3 Unit mm o ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Rating Unit Characterist

 6.1. Size:172K  utc
 mmbt9014.pdf pdf_icon

MMBT9014LT1

UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES * High Total Power Dissipation. (450mW) 1 * Excellent hFE Linearity. 2 * Complementary to UTC MMBT9015 SOT-23 (JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT9014G-x-AE3-R SOT-23 E B C Tape Reel Note Pin

 6.2. Size:66K  semtech
 mmbt9014b mmbt9014c mmbt9014d.pdf pdf_icon

MMBT9014LT1

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO 5 V Collector Current IC 100 mA

 6.3. Size:78K  semtech
 mmbt9014c1.pdf pdf_icon

MMBT9014LT1

MMBT9014C1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 50 V Collector Emitter Voltage VCEO 45 V Emitter Base Voltage VEBO

MOSTRAR MÁS

Otros transistores... MMBT8050 , MMBT8050D , MMBT8050LT1 , MMBT8099LT1G , MMBT8550 , MMBT8550LT1 , MMBT9012LT1 , MMBT9013LT1 , BD140 , MMBT9015LT1 , MMBT9018LT1 , MMBT918LT1G , MMBT945-H , MMBT945-L , MMBTA05LT1G , MMBTA05W , MMBTA06LT1G .

 

 
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