MMBT9014LT1 Datasheet and Replacement

RoHS MMBT9014LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-233PRF-AMPLIFIER,LOW LEVEL&LOW NOISE1 Complemen to MMPT9015LT1 Collector-current:Ic=100mA 2 Collector-Emiller Voltage:VCE=45V1.1.BASE High Totalpower Dissipation Pc=225mW2.EMITTER High life And Good Linearity2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacterist

UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES * High Total Power Dissipation. (450mW) 1* Excellent hFE Linearity. 2* Complementary to UTC MMBT9015 SOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT9014G-x-AE3-R SOT-23 E B C Tape ReelNote: Pin

MMBT9014 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO 5 VCollector Current IC 100 mA

MMBT9014C1 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications As complementary types the PNP transistor MMBT9015 is recommended. 1.Base 2.Emitter 3.Collector TO-236 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 50 VCollector Emitter Voltage VCEO 45 VEmitter Base Voltage VEBO