MMBTA14LT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant* CASE 318 STYLE 6 COLLECTOR 3 MAXIM

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA13LT1/D MMBTA13LT1 Darlington Amplifier Transistors MMBTA14LT1 * NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 30 Vdc Emitte

MPSA14 MMBTA14 PZTA14 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Ba

SMBTA14/MMBTA14 NPN Silicon Darlington Transistor High collector current 2 3 Low collector-emitter saturation voltage 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA14/MMBTA14 s1N SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 30 V Collector-emitter voltage VCES 30 Collector-base voltage

MMBTA13 MMBTA14 Elektronische Bauelemente Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 Dim Min Max A L A 2.800 3.040 COLLECTOR 3 B 1.200 1.400 3 3 C 0.890 1.110 S BASE 1 B 1 2 1 D 0.370 0.500 2 G 1.780 2.040 V G EMITTER 2 H 0.013 0.100 J 0.085 0.177 C FEATURES K 0.450 0.600 H J L 0.890 1.0

SEMICONDUCTOR MMBTA13/14 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 MAXIMUM RATING (Ta=25 ) E 2.40+0.30/-0.20 1 G 1.90 CHARACTERISTIC SYMBOL RATING UNIT H 0.95 J 0.13+0.10/-0.05 VCBO Collector-Base Voltage 30 V K 0.00 0.10

MMBTA13,14 TRANSISTOR (NPN) SOT-23 FEATURES Darlington Amplifier Unit mm 1. BASE Marking MMBTA13 K2D; MMBTA14 K3D 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 0.3 A PC C

MMBTA13,14 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Darlington Amplifier Marking MMBTA13 K2D; MMBTA14 K3D MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 10 V IC Collector

SEMICONDUCTOR MMBTA14 TECHNICAL DATA Darlington Amplifier Transistors We declare that the material of product compliance with RoHS requirements. 3 ORDERING INFORMATION 2 Device Marking Shipping 1 MMBTA13 1M 3000/Tape & Reel MMBTA14 1N 3000/Tape & Reel SOT 23 MAXIMUM RATINGS COLLECTOR Rating Symbol Value Unit 3 Collector Emitter Voltage V 30 Vdc CES 1 Collector Base Vol

SMD Type Diodes Darlington Transistors MMBTA14 (KMBTA14) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=0.3A Collector Emitter Voltage VCEO=30V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO