MMBTA14LT1G Datasheet. Specs and Replacement

Type Designator: MMBTA14LT1G  📄📄 

SMD Transistor Code: 1N

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 30 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 125 MHz

Forward Current Transfer Ratio (hFE), MIN: 5000

Noise Figure, dB: -

Package: SOT-23

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MMBTA14LT1G datasheet

 ..1. Size:791K  onsemi

mmbta13lt1g mmbta14lt1g.pdf pdf_icon

MMBTA14LT1G

MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon http //onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SOT-23 (TO-236) Compliant* CASE 318 STYLE 6 COLLECTOR 3 MAXIM... See More ⇒

 7.1. Size:235K  motorola

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MMBTA14LT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA13LT1/D MMBTA13LT1 Darlington Amplifier Transistors MMBTA14LT1 * NPN Silicon COLLECTOR 3 *Motorola Preferred Device BASE 1 3 EMITTER 2 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCES 30 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 30 Vdc Emitte... See More ⇒

 7.2. Size:887K  fairchild semi

mmbta14.pdf pdf_icon

MMBTA14LT1G

MPSA14 MMBTA14 PZTA14 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 1N NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCES Collector-Emitter Voltage 30 V VCBO Collector-Ba... See More ⇒

 7.3. Size:525K  infineon

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MMBTA14LT1G

SMBTA14/MMBTA14 NPN Silicon Darlington Transistor High collector current 2 3 Low collector-emitter saturation voltage 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA14/MMBTA14 s1N SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 30 V Collector-emitter voltage VCES 30 Collector-base voltage... See More ⇒

Detailed specifications: MMBTA05W, MMBTA06LT1G, MMBTA06W, MMBTA06WT1G, MMBTA10, MMBTA10Q, MMBTA11, MMBTA13LT1G, BC327, MMBTA42-G, MMBTA42LT1G, MMBTA55LT1G, MMBTA56LT1G, MMBTA56WT1G, MMBTA63LT1G, MMBTA64LT1G, MMBTA70LT1G

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