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MMBTA56WT1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMBTA56WT1G
   Código: FM
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.15 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT-323

 Búsqueda de reemplazo de transistor bipolar MMBTA56WT1G

 

MMBTA56WT1G Datasheet (PDF)

 ..1. Size:107K  onsemi
mmbta56wt1g.pdf pdf_icon

MMBTA56WT1G

MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SC-70 (SOT-323) CASE 419 These Devices are Pb-Free, Halog

 6.1. Size:162K  onsemi
mmbta56w smmbta56w.pdf pdf_icon

MMBTA56WT1G

MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SC-70 (SOT-323) CASE 419 These Devices are Pb-Free, Halogen

 7.1. Size:77K  motorola
mmbta55l mmbta56.pdf pdf_icon

MMBTA56WT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA55LT1/D Driver Transistors MMBTA55LT1 COLLECTOR PNP Silicon 3 MMBTA56LT1* *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol MMBTA55 MMBTA56 Unit 1 Collector Emitter Voltage VCEO 60 80 Vdc 2 Collector Base Voltage VCBO 60 80 Vdc Emitter Base Voltage VEBO 4.0 Vdc

 7.2. Size:1073K  fairchild semi
mpsa56 mmbta56 pzta56.pdf pdf_icon

MMBTA56WT1G

February 2006 MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25 C unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage VCES -80 V Collector-Base Voltage VCBO -80 V Emitter-Base Voltag

Otros transistores... MMBTA10Q , MMBTA11 , MMBTA13LT1G , MMBTA14LT1G , MMBTA42-G , MMBTA42LT1G , MMBTA55LT1G , MMBTA56LT1G , 2SC1815 , MMBTA63LT1G , MMBTA64LT1G , MMBTA70LT1G , MMBTA92-G , MMBTA92LT1G , MMBTH10-4LT1G , MMBTH10LT1G , MMBTH10M3 .

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