MMBTA56WT1G datasheet, аналоги, основные параметры
Наименование производителя: MMBTA56WT1G 📄📄
Маркировка: FM
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 50 MHz
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT-323
📄📄 Копировать
Аналоги (замена) для MMBTA56WT1G
- подборⓘ биполярного транзистора по параметрам
MMBTA56WT1G даташит
..1. Size:107K onsemi
mmbta56wt1g.pdf 
MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SC-70 (SOT-323) CASE 419 These Devices are Pb-Free, Halog
6.1. Size:162K onsemi
mmbta56w smmbta56w.pdf 
MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SC-70 (SOT-323) CASE 419 These Devices are Pb-Free, Halogen
7.1. Size:77K motorola
mmbta55l mmbta56.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA55LT1/D Driver Transistors MMBTA55LT1 COLLECTOR PNP Silicon 3 MMBTA56LT1* *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol MMBTA55 MMBTA56 Unit 1 Collector Emitter Voltage VCEO 60 80 Vdc 2 Collector Base Voltage VCBO 60 80 Vdc Emitter Base Voltage VEBO 4.0 Vdc
7.2. Size:1073K fairchild semi
mpsa56 mmbta56 pzta56.pdf 
February 2006 MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25 C unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage VCES -80 V Collector-Base Voltage VCBO -80 V Emitter-Base Voltag
7.3. Size:393K diodes
mmbta55 mmbta56.pdf 
MMBTA55 / MMBTA56 PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Ideal for Low Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound; Complementary NPN Type MMBTA05 / MMBTA06 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Complian
7.4. Size:522K infineon
smbta56 mmbta56.pdf 
SMBTA56/MMBTA56 PNP Silicon AF Transistor Low collector-emitter saturation voltage 2 3 Complementary type SMBTA06 / MMBTA06(NPN) 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA56/MMBTA56 s2G SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 80 V Collector-emitter voltage VCEO 80 Collector-
7.5. Size:220K mcc
mmbta55 mmbta56 sot-23.pdf 
MCC MMBTA55 TM Micro Commercial Components 20736 Marilla Street Chatsworth THRU Micro Commercial Components CA 91311 Phone (818) 701-4933 MMBTA56 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General This device is designed for general purpose amplifier applications at collector curren
7.6. Size:608K mcc
mmbta55 mmbta56.pdf 
MMBTA55,MMBTA56 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to
7.7. Size:391K onsemi
mmbta56 pzta56.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
7.8. Size:69K onsemi
mmbta55l mmbta56l.pdf 
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant COLLECTOR 3 MAXIMUM RATINGS Rat
7.9. Size:103K onsemi
mmbta55lt1 mmbta56lt1.pdf 
MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc MMBTA55 -60 3 MMBTA56 -80 Collector-Base Voltage VCBO Vdc MMBTA55 -60 1 MMBTA56 -80 2 Emitter-Base Voltage VE
7.10. Size:148K onsemi
mmbta55l mmbta56l smmbta56l.pdf 
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant COLLECTOR 3 MAXIMUM RATINGS Rat
7.11. Size:112K onsemi
mmbta56lt1g.pdf 
MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant* COLLECTOR 3 MAXIMUM RATING
7.12. Size:222K utc
mmbta56.pdf 
UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage VCEO=-80V * Collector Dissipation PD=350mW 1 2 SOT-23 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA56L-AE3-R MMBTA56G-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 5
7.13. Size:279K secos
mmbta55-mmbta56.pdf 
MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 Dim Min Max 1 A A 2.800 3.040 L 2 B 1.200 1.400 3 C 0.890 1.110 S COLLECTOR Top View B D 0.370 0.500 1 2 3 G 1.780 2.040 V G H 0.013 0.100 1 J 0.085 0.177 BASE C K 0.450 0.600 L 0.890 1.020 2 H J D E
7.14. Size:68K secos
mmbta56.pdf 
MMBTA56 -0.5A , -80V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES General Purpose Amplifier Applications A L 3 3 MARKING Top View C B 1 1 2 2GM 2 K E D PACKAGE INFORMATION H J F G Package MPQ Leader Size SOT-23 3K 7 inch Millimeter Millimeter R
7.15. Size:627K jiangsu
ad-mmbta56.pdf 
www.jscj-elec.com AD-MMBTA56 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA56 Plastic-Encapsulated Transistor AD-MMBTA56 Transistor (PNP) FEATURES General purpose amplifier applications AEC-Q101 qualified MARKING 2GM = Device code 2GM Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA56 MAXIMUM RATINGS (T = 25 C unless otherwise specifie
7.16. Size:289K jiangsu
mmbta56.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (PNP) SOT 23 FEATURES General Purpose Amplifier Applications MARKING 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V
7.17. Size:32K kec
mmbta56.pdf 
SEMICONDUCTOR MMBTA56 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURE E Complementary to MMBTA06 L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-B
7.18. Size:803K htsemi
mmbta56.pdf 
MMBTA56 TRANSISTOR(PNP) SOT 23 FEATURES General Purpose Amplifier Applications MARKING 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V CEO VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissip
7.19. Size:212K semtech
mmbta56.pdf 
MMBTA56 PNP General Purpose Transistor for amplifier applications On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCES 80 V Emitter Base Voltage -VEBO 4 V Collector Current -IC 500 mA
7.20. Size:1209K kexin
mmbta56.pdf 
SMD Type Transistors PNP Transistors MMBTA56 (KMBTA56) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V 1 2 COLLECTOR +0.1 +0.05 3 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1 1.Base BASE 2.Emitter 3.collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un
7.21. Size:394K panjit
mmbta05-au mmbta06-au mmbta55-au mmbta56-au.pdf 
PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (
7.22. Size:483K panjit
mmbta05 mmbta06 mmbta55 mmbta56.pdf 
PMMBTA05 / MMBTA06 / MMBTA55 / MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case SOT-23 Package Terminals Solderable
7.23. Size:546K slkor
mmbta56l mmbta56h mmbta56g.pdf 
MMBTA56 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary Type NPN Transistor MMBTA06 General Purpose Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Em
7.26. Size:310K cn yangzhou yangjie elec
mmbta55 mmbta56.pdf 
RoHS RoHS COMPLIANT COMPLIANT MMBTA55 THRU MMBTA56 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound
Другие транзисторы: MMBTA10Q, MMBTA11, MMBTA13LT1G, MMBTA14LT1G, MMBTA42-G, MMBTA42LT1G, MMBTA55LT1G, MMBTA56LT1G, 2SC1815, MMBTA63LT1G, MMBTA64LT1G, MMBTA70LT1G, MMBTA92-G, MMBTA92LT1G, MMBTH10-4LT1G, MMBTH10LT1G, MMBTH10M3
