MMBTA56WT1G Datasheet. Specs and Replacement

Type Designator: MMBTA56WT1G  📄📄 

SMD Transistor Code: FM

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-323

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MMBTA56WT1G datasheet

 ..1. Size:107K  onsemi

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MMBTA56WT1G

MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SC-70 (SOT-323) CASE 419 These Devices are Pb-Free, Halog... See More ⇒

 6.1. Size:162K  onsemi

mmbta56w smmbta56w.pdf pdf_icon

MMBTA56WT1G

MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SC-70 (SOT-323) CASE 419 These Devices are Pb-Free, Halogen ... See More ⇒

 7.1. Size:77K  motorola

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MMBTA56WT1G

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA55LT1/D Driver Transistors MMBTA55LT1 COLLECTOR PNP Silicon 3 MMBTA56LT1* *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol MMBTA55 MMBTA56 Unit 1 Collector Emitter Voltage VCEO 60 80 Vdc 2 Collector Base Voltage VCBO 60 80 Vdc Emitter Base Voltage VEBO 4.0 Vdc ... See More ⇒

 7.2. Size:1073K  fairchild semi

mpsa56 mmbta56 pzta56.pdf pdf_icon

MMBTA56WT1G

February 2006 MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25 C unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage VCES -80 V Collector-Base Voltage VCBO -80 V Emitter-Base Voltag... See More ⇒

Detailed specifications: MMBTA10Q, MMBTA11, MMBTA13LT1G, MMBTA14LT1G, MMBTA42-G, MMBTA42LT1G, MMBTA55LT1G, MMBTA56LT1G, 2SC1815, MMBTA63LT1G, MMBTA64LT1G, MMBTA70LT1G, MMBTA92-G, MMBTA92LT1G, MMBTH10-4LT1G, MMBTH10LT1G, MMBTH10M3

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