MMJT350T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMJT350T1G  📄📄 

Código: T350

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 2.75 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: SOT-223

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MMJT350T1G datasheet

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 mmjt350t1g.pdf pdf_icon

MMJT350T1G

MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line-operated http //onsemi.com applications such as low power, line-operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE Features POWER TRANSISTOR High Collector-Emitter Sustaining Voltage - PNP SILICON VCEO(sus) = 300 Vdc @ IC 300 VOL

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MMJT350T1G

MMJT350 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. www.onsemi.com Features 0.5 AMPERE High Collector-Emitter Sustaining Voltage POWER TRANSISTOR Excellent DC Current Gain PNP SILICON Epoxy Meets UL 94 V-0

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