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MMJT350T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMJT350T1G
   Código: T350
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2.75 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: SOT-223
 

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MMJT350T1G Datasheet (PDF)

 ..1. Size:137K  onsemi
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MMJT350T1G

MMJT350T1G,SMMJT350T1GBipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedhttp://onsemi.comapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.0.5 AMPEREFeaturesPOWER TRANSISTOR High Collector-Emitter Sustaining Voltage -PNP SILICONVCEO(sus) = 300 Vdc @ IC 300 VOL

 7.1. Size:184K  onsemi
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MMJT350T1G

MMJT350Bipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.www.onsemi.comFeatures0.5 AMPERE High Collector-Emitter Sustaining VoltagePOWER TRANSISTOR Excellent DC Current GainPNP SILICON Epoxy Meets UL 94 V-0

Otros transistores... MMBTH10W , MMDT3904V , MMDT3906V , MMDT8050S , MMDT8150 , MMDTA06 , MMJD2955 , MMJD3055 , C3198 , MMS8050-H , MMS8050-L , MMS8550-H , MMS8550-L , MMS9012-H , MMS9012-L , MMS9013-H , MMS9013-L .

History: TI910 | BFW98G

 

 
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