MMJT350T1G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMJT350T1G
Código: T350
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 2.75 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SOT-223
Búsqueda de reemplazo de transistor bipolar MMJT350T1G
MMJT350T1G Datasheet (PDF)
mmjt350t1g.pdf
MMJT350T1G,SMMJT350T1GBipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedhttp://onsemi.comapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.0.5 AMPEREFeaturesPOWER TRANSISTOR High Collector-Emitter Sustaining Voltage -PNP SILICONVCEO(sus) = 300 Vdc @ IC 300 VOL
mmjt350.pdf
MMJT350Bipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.www.onsemi.comFeatures0.5 AMPERE High Collector-Emitter Sustaining VoltagePOWER TRANSISTOR Excellent DC Current GainPNP SILICON Epoxy Meets UL 94 V-0
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
