MMJT350T1G Datasheet. Specs and Replacement

Type Designator: MMJT350T1G  📄📄 

SMD Transistor Code: T350

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2.75 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT-223

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MMJT350T1G datasheet

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MMJT350T1G

MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line-operated http //onsemi.com applications such as low power, line-operated series pass and switching regulators requiring PNP capability. 0.5 AMPERE Features POWER TRANSISTOR High Collector-Emitter Sustaining Voltage - PNP SILICON VCEO(sus) = 300 Vdc @ IC 300 VOL... See More ⇒

 7.1. Size:184K  onsemi

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MMJT350T1G

MMJT350 Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability. www.onsemi.com Features 0.5 AMPERE High Collector-Emitter Sustaining Voltage POWER TRANSISTOR Excellent DC Current Gain PNP SILICON Epoxy Meets UL 94 V-0... See More ⇒

Detailed specifications: MMBTH10W, MMDT3904V, MMDT3906V, MMDT8050S, MMDT8150, MMDTA06, MMJD2955, MMJD3055, 9014, MMS8050-H, MMS8050-L, MMS8550-H, MMS8550-L, MMS9012-H, MMS9012-L, MMS9013-H, MMS9013-L

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