All Transistors. MMJT350T1G Datasheet

 

MMJT350T1G Datasheet and Replacement


   Type Designator: MMJT350T1G
   SMD Transistor Code: T350
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.75 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT-223
 

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MMJT350T1G Datasheet (PDF)

 ..1. Size:137K  onsemi
 mmjt350t1g.pdf pdf_icon

MMJT350T1G

MMJT350T1G,SMMJT350T1GBipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedhttp://onsemi.comapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.0.5 AMPEREFeaturesPOWER TRANSISTOR High Collector-Emitter Sustaining Voltage -PNP SILICONVCEO(sus) = 300 Vdc @ IC 300 VOL

 7.1. Size:184K  onsemi
 mmjt350.pdf pdf_icon

MMJT350T1G

MMJT350Bipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.www.onsemi.comFeatures0.5 AMPERE High Collector-Emitter Sustaining VoltagePOWER TRANSISTOR Excellent DC Current GainPNP SILICON Epoxy Meets UL 94 V-0

Datasheet: MMBTH10W , MMDT3904V , MMDT3906V , MMDT8050S , MMDT8150 , MMDTA06 , MMJD2955 , MMJD3055 , C3198 , MMS8050-H , MMS8050-L , MMS8550-H , MMS8550-L , MMS9012-H , MMS9012-L , MMS9013-H , MMS9013-L .

History: KSB707Y | FZT1048A | 2SD1667 | AT30511 | 40881 | 2SB738 | PDTA124XU

Keywords - MMJT350T1G transistor datasheet

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