All Transistors. MMJT350T1G Datasheet

 

MMJT350T1G Datasheet and Replacement


   Type Designator: MMJT350T1G
   SMD Transistor Code: T350
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 2.75 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT-223
      - BJT Cross-Reference Search

   

MMJT350T1G Datasheet (PDF)

 ..1. Size:137K  onsemi
 mmjt350t1g.pdf pdf_icon

MMJT350T1G

MMJT350T1G,SMMJT350T1GBipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedhttp://onsemi.comapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.0.5 AMPEREFeaturesPOWER TRANSISTOR High Collector-Emitter Sustaining Voltage -PNP SILICONVCEO(sus) = 300 Vdc @ IC 300 VOL

 7.1. Size:184K  onsemi
 mmjt350.pdf pdf_icon

MMJT350T1G

MMJT350Bipolar Power TransistorsPNP SiliconBipolar power transistors are designed for use in line-operatedapplications such as low power, line-operated series pass andswitching regulators requiring PNP capability.www.onsemi.comFeatures0.5 AMPERE High Collector-Emitter Sustaining VoltagePOWER TRANSISTOR Excellent DC Current GainPNP SILICON Epoxy Meets UL 94 V-0

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: MP11A | MM4019 | BTB1424AT3 | 2N2473 | 2N3183 | 2SB1144S | BF420A

Keywords - MMJT350T1G transistor datasheet

 MMJT350T1G cross reference
 MMJT350T1G equivalent finder
 MMJT350T1G lookup
 MMJT350T1G substitution
 MMJT350T1G replacement

 

 
Back to Top

 


 
.