MX0912B100Y Todos los transistores

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MX0912B100Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MX0912B100Y

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 290 W

Tensión colector-base (Vcb): 65 V

Tensión colector-emisor (Vce): 20 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 1215 MHz

Ganancia de corriente contínua (hfe): 7

Empaquetado / Estuche: SOT-439A

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MX0912B100Y Datasheet (PDF)

1.1. mx0912b100y.pdf Size:78K _upd

MX0912B100Y
MX0912B100Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING • Interdigitated structure provides high emitter efficiency PIN DESCRIPTION • Diffused emitter ballasting

1.2. mx0912b100y mz0912b100y.pdf Size:81K _philips

MX0912B100Y
MX0912B100Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resisto

 3.1. mx0912b351y 2.pdf Size:76K _philips

MX0912B100Y
MX0912B100Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resistors providing excellent

3.2. mx0912b251y 2.pdf Size:77K _philips

MX0912B100Y
MX0912B100Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resistors providing excellent

Otros transistores... MMSS8550-H , MMSS8550-L , MMSS8550W-H , MMSS8550W-J , MMSS8550W-L , MMST2222A-G , MMT8050 , MMT8550 , BC556 , P2N2222AG , DTC114WM , PBHV2160Z , PBHV3160Z , PBHV8115X , PBHV8118T , PBHV8540X , PBHV8560Z .

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