MX0912B100Y Todos los transistores

 

MX0912B100Y . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MX0912B100Y
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 290 W
   Tensión colector-base (Vcb): 65 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 1215 MHz
   Ganancia de corriente contínua (hfe): 7
   Paquete / Cubierta: SOT-439A
 

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MX0912B100Y Datasheet (PDF)

 ..1. Size:81K  philips
 mx0912b100y mz0912b100y.pdf pdf_icon

MX0912B100Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

 ..2. Size:78K  philips
 mx0912b100y.pdf pdf_icon

MX0912B100Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B100Y; MZ0912B100YNPN microwave power transistors1997 Feb 20Product specificationSupersedes data of June 1992Philips Semiconductors Product specificationNPN microwave power transistors MX0912B100Y; MZ0912B100YFEATURES PINNING Interdigitated structure provides high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting

 7.1. Size:77K  philips
 mx0912b251y 2.pdf pdf_icon

MX0912B100Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B251YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B251YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex

 7.2. Size:76K  philips
 mx0912b351y 2.pdf pdf_icon

MX0912B100Y

DISCRETE SEMICONDUCTORSDATA SHEETMX0912B351YNPN microwave power transistor1997 Feb 19Product specificationSupersedes data of November 1994Philips Semiconductors Product specificationNPN microwave power transistor MX0912B351YFEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiencyPIN DESCRIPTION Diffused emitter ballasting resistors providing ex

MOSTRAR MÁS

Otros transistores... MMSS8550-H , MMSS8550-L , MMSS8550W-H , MMSS8550W-J , MMSS8550W-L , MMST2222A-G , MMT8050 , MMT8550 , 13001-A , P2N2222AG , DTC114WM , PBHV2160Z , PBHV3160Z , PBHV8115X , PBHV8118T , PBHV8540X , PBHV8560Z .

 

 
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