MX0912B100Y Datasheet. Specs and Replacement

Type Designator: MX0912B100Y  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 290 W

Maximum Collector-Base Voltage |Vcb|: 65 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 1215 MHz

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: SOT-439A

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MX0912B100Y datasheet

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MX0912B100Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting ... See More ⇒

 ..2. Size:78K  philips

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MX0912B100Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting ... See More ⇒

 7.1. Size:77K  philips

 mx0912b251y 2.pdf pdf_icon

MX0912B100Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resistors providing ex... See More ⇒

 7.2. Size:76K  philips

 mx0912b351y 2.pdf pdf_icon

MX0912B100Y

DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resistors providing ex... See More ⇒

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Detailed specifications: MMSS8550-H, MMSS8550-L, MMSS8550W-H, MMSS8550W-J, MMSS8550W-L, MMST2222A-G, MMT8050, MMT8550, 2SC828, P2N2222AG, DTC114WM, PBHV2160Z, PBHV3160Z, PBHV8115X, PBHV8118T, PBHV8540X, PBHV8560Z

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