MX0912B100Y Specs and Replacement
Type Designator: MX0912B100Y
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 290 W
Maximum Collector-Base Voltage |Vcb|: 65 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1215 MHz
Forward Current Transfer Ratio (hFE), MIN: 7
Noise Figure, dB: -
Package: SOT-439A
MX0912B100Y Transistor Equivalent Substitute - Cross-Reference Search
MX0912B100Y detailed specifications
mx0912b100y mz0912b100y.pdf
DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting ... See More ⇒
mx0912b100y.pdf
DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors 1997 Feb 20 Product specification Supersedes data of June 1992 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y FEATURES PINNING Interdigitated structure provides high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting ... See More ⇒
mx0912b251y 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET MX0912B251Y NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MX0912B251Y FEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resistors providing ex... See More ⇒
mx0912b351y 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor 1997 Feb 19 Product specification Supersedes data of November 1994 Philips Semiconductors Product specification NPN microwave power transistor MX0912B351Y FEATURES PINNING - SOT439A Interdigitated structure; high emitter efficiency PIN DESCRIPTION Diffused emitter ballasting resistors providing ex... See More ⇒
Detailed specifications: MMSS8550-H , MMSS8550-L , MMSS8550W-H , MMSS8550W-J , MMSS8550W-L , MMST2222A-G , MMT8050 , MMT8550 , MPSA42 , P2N2222AG , DTC114WM , PBHV2160Z , PBHV3160Z , PBHV8115X , PBHV8118T , PBHV8540X , PBHV8560Z .
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