PBHV8560Z Todos los transistores

 

PBHV8560Z . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBHV8560Z
   Código: HV856Z
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.65 W
   Tensión colector-base (Vcb): 600 V
   Tensión colector-emisor (Vce): 600 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Capacitancia de salida (Cc): 7.5 pF
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT-223
 

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PBHV8560Z Datasheet (PDF)

 ..1. Size:209K  nxp
pbhv8560z.pdf pdf_icon

PBHV8560Z

PBHV8560Z600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor13 March 2015 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223(SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9560Z2. Features and benefits Low collector-emitter saturation voltage VCEsat Hi

 8.1. Size:108K  philips
pbhv8540t.pdf pdf_icon

PBHV8560Z

PBHV8540T500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 02 14 January 2009 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040T.1.2 Features High voltage Low collector-emitter sa

 8.2. Size:236K  nxp
pbhv8540x.pdf pdf_icon

PBHV8560Z

PBHV8540X500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor5 December 2013 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040X.2. Features and benefits High voltage Low collector-emitter

 8.3. Size:120K  nxp
pbhv8540z.pdf pdf_icon

PBHV8560Z

PBHV8540Z500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040Z.1.2 Features High voltage Low collector-emitt

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