All Transistors. PBHV8560Z Datasheet

 

PBHV8560Z Datasheet and Replacement


   Type Designator: PBHV8560Z
   SMD Transistor Code: HV856Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.65 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 7.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT-223
 

 PBHV8560Z Substitution

   - BJT ⓘ Cross-Reference Search

   

PBHV8560Z Datasheet (PDF)

 ..1. Size:209K  nxp
pbhv8560z.pdf pdf_icon

PBHV8560Z

PBHV8560Z600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor13 March 2015 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223(SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9560Z2. Features and benefits Low collector-emitter saturation voltage VCEsat Hi

 8.1. Size:108K  philips
pbhv8540t.pdf pdf_icon

PBHV8560Z

PBHV8540T500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 02 14 January 2009 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040T.1.2 Features High voltage Low collector-emitter sa

 8.2. Size:236K  nxp
pbhv8540x.pdf pdf_icon

PBHV8560Z

PBHV8540X500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor5 December 2013 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040X.2. Features and benefits High voltage Low collector-emitter

 8.3. Size:120K  nxp
pbhv8540z.pdf pdf_icon

PBHV8560Z

PBHV8540Z500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 7 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9040Z.1.2 Features High voltage Low collector-emitt

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 3DA150B | BC636 | DMC56405

Keywords - PBHV8560Z transistor datasheet

 PBHV8560Z cross reference
 PBHV8560Z equivalent finder
 PBHV8560Z lookup
 PBHV8560Z substitution
 PBHV8560Z replacement

 

 
Back to Top

 


 
.