PBHV8560Z Datasheet. Specs and Replacement

Type Designator: PBHV8560Z  📄📄 

SMD Transistor Code: HV856Z

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.65 W

Maximum Collector-Base Voltage |Vcb|: 600 V

Maximum Collector-Emitter Voltage |Vce|: 600 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 7.5 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT-223

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PBHV8560Z datasheet

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PBHV8560Z

PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9560Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat Hi... See More ⇒

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PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040T. 1.2 Features High voltage Low collector-emitter sa... See More ⇒

 8.2. Size:236K  nxp

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PBHV8560Z

PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040X. 2. Features and benefits High voltage Low collector-emitter... See More ⇒

 8.3. Size:120K  nxp

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PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040Z. 1.2 Features High voltage Low collector-emitt... See More ⇒

Detailed specifications: MX0912B100Y, P2N2222AG, DTC114WM, PBHV2160Z, PBHV3160Z, PBHV8115X, PBHV8118T, PBHV8540X, 2SD882, PBHV9040X, PBHV9050Z, PBHV9115X, PBHV9414Z, PBHV9560Z, PUML1_DG, PUMX2, PUMZ2

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