All Transistors. PBHV8560Z Datasheet

 

PBHV8560Z Datasheet and Replacement


   Type Designator: PBHV8560Z
   SMD Transistor Code: HV856Z
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.65 W
   Maximum Collector-Base Voltage |Vcb|: 600 V
   Maximum Collector-Emitter Voltage |Vce|: 600 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 7.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: SOT-223

 PBHV8560Z Transistor Equivalent Substitute - Cross-Reference Search

   

PBHV8560Z Datasheet (PDF)

 ..1. Size:209K  nxp
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PBHV8560Z

PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9560Z 2. Features and benefits Low collector-emitter saturation voltage VCEsat Hi... See More ⇒

 8.1. Size:108K  philips
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PBHV8560Z

PBHV8540T 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 02 14 January 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040T. 1.2 Features High voltage Low collector-emitter sa... See More ⇒

 8.2. Size:236K  nxp
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PBHV8560Z

PBHV8540X 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 5 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040X. 2. Features and benefits High voltage Low collector-emitter... See More ⇒

 8.3. Size:120K  nxp
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PBHV8560Z

PBHV8540Z 500 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 7 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. PNP complement PBHV9040Z. 1.2 Features High voltage Low collector-emitt... See More ⇒

Datasheet: MX0912B100Y , P2N2222AG , DTC114WM , PBHV2160Z , PBHV3160Z , PBHV8115X , PBHV8118T , PBHV8540X , TIP120 , PBHV9040X , PBHV9050Z , PBHV9115X , PBHV9414Z , PBHV9560Z , PUML1_DG , PUMX2 , PUMZ2 .

History: CSB1065Q | T1858 | T1691 | T1686 | T2172 | NB014EY

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