PBHV9115X
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PBHV9115X
Código: *4G
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.52
W
Tensión colector-base (Vcb): 200
V
Tensión colector-emisor (Vce): 150
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 1
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 115
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta:
SOT-89
Búsqueda de reemplazo de transistor bipolar PBHV9115X
PBHV9115X
Datasheet (PDF)
..1. Size:155K philips
pbhv9115x.pdf 
PBHV9115X150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 10 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturat
..2. Size:155K nxp
pbhv9115x.pdf
PBHV9115X150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 10 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturat
6.1. Size:129K philips
pbhv9115z.pdf
PBHV9115Z150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 9 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8115Z.1.2 Features High voltage Low collector-emitter
6.2. Size:111K nxp
pbhv9115t.pdf
PBHV9115T150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 9 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8115T.1.2 Features High voltage Low collector-emitter satur
6.3. Size:413K nxp
pbhv9115tlh.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
6.4. Size:246K nxp
pbhv9115z.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
Otros transistores... 2N3200
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.
