PBHV9115X Todos los transistores

 

PBHV9115X Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PBHV9115X
   Código: *4G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.52 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 150 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 115 MHz
   Capacitancia de salida (Cc): 10 pF
   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: SOT-89
 

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PBHV9115X datasheet

 ..1. Size:155K  philips
pbhv9115x.pdf pdf_icon

PBHV9115X

PBHV9115X 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 10 March 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturat

 ..2. Size:155K  nxp
pbhv9115x.pdf pdf_icon

PBHV9115X

PBHV9115X 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 10 March 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturat

 6.1. Size:129K  philips
pbhv9115z.pdf pdf_icon

PBHV9115X

PBHV9115Z 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115Z. 1.2 Features High voltage Low collector-emitter

 6.2. Size:111K  nxp
pbhv9115t.pdf pdf_icon

PBHV9115X

PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T. 1.2 Features High voltage Low collector-emitter satur

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