All Transistors. PBHV9115X Datasheet

 

PBHV9115X Datasheet and Replacement


   Type Designator: PBHV9115X
   SMD Transistor Code: *4G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.52 W
   Maximum Collector-Base Voltage |Vcb|: 200 V
   Maximum Collector-Emitter Voltage |Vce|: 150 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 115 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 10
   Noise Figure, dB: -
   Package: SOT-89
 

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PBHV9115X Datasheet (PDF)

 ..1. Size:155K  philips
pbhv9115x.pdf pdf_icon

PBHV9115X

PBHV9115X150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 10 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturat

 ..2. Size:155K  nxp
pbhv9115x.pdf pdf_icon

PBHV9115X

PBHV9115X150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 01 10 March 2010 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package.1.2 Features and benefits High voltage Low collector-emitter saturat

 6.1. Size:129K  philips
pbhv9115z.pdf pdf_icon

PBHV9115X

PBHV9115Z150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 9 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8115Z.1.2 Features High voltage Low collector-emitter

 6.2. Size:111K  nxp
pbhv9115t.pdf pdf_icon

PBHV9115X

PBHV9115T150 V, 1 A PNP high-voltage low VCEsat (BISS) transistorRev. 02 9 January 2009 Product data sheet1. Product profile1.1 General descriptionPNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.NPN complement: PBHV8115T.1.2 Features High voltage Low collector-emitter satur

Datasheet: PBHV2160Z , PBHV3160Z , PBHV8115X , PBHV8118T , PBHV8540X , PBHV8560Z , PBHV9040X , PBHV9050Z , S9018 , PBHV9414Z , PBHV9560Z , PUML1_DG , PUMX2 , PUMZ2 , PVR100AD-B12V , PVR100AD-B2V5 , PVR100AD-B3V0 .

History: BDX65A | MSD601 | BC383C | 2SB1202S | RT141 | KSP24 | BUX10

Keywords - PBHV9115X transistor datasheet

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