PBHV9115X Datasheet. Specs and Replacement

Type Designator: PBHV9115X  📄📄 

SMD Transistor Code: *4G

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.52 W

Maximum Collector-Base Voltage |Vcb|: 200 V

Maximum Collector-Emitter Voltage |Vce|: 150 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 115 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: SOT-89

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PBHV9115X datasheet

 ..1. Size:155K  philips

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PBHV9115X

PBHV9115X 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 10 March 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturat... See More ⇒

 ..2. Size:155K  nxp

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PBHV9115X

PBHV9115X 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 10 March 2010 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat Surface-Mounted Device (SMD) plastic package. 1.2 Features and benefits High voltage Low collector-emitter saturat... See More ⇒

 6.1. Size:129K  philips

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PBHV9115X

PBHV9115Z 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115Z. 1.2 Features High voltage Low collector-emitter ... See More ⇒

 6.2. Size:111K  nxp

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PBHV9115X

PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat (BISS) transistor Rev. 02 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement PBHV8115T. 1.2 Features High voltage Low collector-emitter satur... See More ⇒

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Detailed specifications: PBHV2160Z, PBHV3160Z, PBHV8115X, PBHV8118T, PBHV8540X, PBHV8560Z, PBHV9040X, PBHV9050Z, 2SA1013, PBHV9414Z, PBHV9560Z, PUML1_DG, PUMX2, PUMZ2, PVR100AD-B12V, PVR100AD-B2V5, PVR100AD-B3V0

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