S-L2SA2030M3T5G . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: S-L2SA2030M3T5G
Código: BW
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 260 MHz
Capacitancia de salida (Cc): 6.5 pF
Ganancia de corriente contínua (hfe): 270
Empaquetado / Estuche: SOT-723
Búsqueda de reemplazo de transistor bipolar S-L2SA2030M3T5G
S-L2SA2030M3T5G Datasheet (PDF)
1.1. s-l2sa2030m3t5g.pdf 
Size:125K _upd
LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) ≤ 250mA At IC = -200mA / IB = -10mA
5.1. s-l2sc3837t1g.pdf Size:94K _upd
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
Otros transistores... D32W7 , D32W8 , D32W9 , D33D1 , D33D2 , D33D21 , D33D22 , D33D23 , S9014 , D33D25 , D33D26 , D33D27 , D33D28 , D33D29 , D33D3 , D33D30 , D33D4 .
