All Transistors. S-L2SA2030M3T5G Datasheet

 

S-L2SA2030M3T5G Datasheet, Equivalent, Cross Reference Search

Type Designator: S-L2SA2030M3T5G

SMD Transistor Code: BW

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 12 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 260 MHz

Collector Capacitance (Cc): 6.5 pF

Forward Current Transfer Ratio (hFE), MIN: 270

Noise Figure, dB: -

Package: SOT-723

S-L2SA2030M3T5G Transistor Equivalent Substitute - Cross-Reference Search

 

S-L2SA2030M3T5G Datasheet (PDF)

1.1. s-l2sa2030m3t5g.pdf Size:125K _upd

S-L2SA2030M3T5G
S-L2SA2030M3T5G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) ≤ 250mA At IC = -200mA / IB = -10mA

5.1. s-l2sc3837t1g.pdf Size:94K _upd

S-L2SA2030M3T5G
S-L2SA2030M3T5G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

Datasheet: RXT2222A , RXT2907A , S1015 , S1815 , S2000N , S2055N , S2SA1774G , S2SC4617G , C102 , S-L2SC3837T1G , UD2195 , UMF21N , UMF5N , BCR108F , BCR112W , BCR116S , BCR119F .

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