S-L2SC3837T1G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: S-L2SC3837T1G  📄📄 

Código: H15

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 18 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 600 MHz

Capacitancia de salida (Cc): 0.9 pF

Ganancia de corriente contínua (hFE): 56

Encapsulados: SOT-457

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S-L2SC3837T1G datasheet

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S-L2SC3837T1G

LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101

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s-l2sa2030m3t5g.pdf pdf_icon

S-L2SC3837T1G

LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA

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S-L2SC3837T1G

L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low on-resistance. Drain (3) Fast switching sp

Otros transistores... RXT2907A, S1015, S1815, S2000N, S2055N, S2SA1774G, S2SC4617G, S-L2SA2030M3T5G, S9014, UD2195, UMF21N, UMF5N, BCR108F, BCR112W, BCR116S, BCR119F, BCR119W