S-L2SC3837T1G Specs and Replacement
Type Designator: S-L2SC3837T1G
SMD Transistor Code: H15
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 600 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 56
Package: SOT-457
S-L2SC3837T1G Substitution
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S-L2SC3837T1G datasheet
LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor Features L2SC3837T1G 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb Cc and high gain.(Typ.6ps) S-L2SC3837T1G 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. 5.S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 ... See More ⇒
LESHAN RADIO COMP ANY, LTD. Low frequency transistor The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching, for muting. PNP Features L2SA2030M3T5G 1) A collector current is large. 2) Collector saturation voltage is low. S-L2SA2030M3T5G VCE (sat) 250mA At IC = -200mA / IB = -10mA... See More ⇒
l2sk3018wt1g s-l2sk3018wt1g.pdf 
L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low on-resistance. Drain (3) Fast switching sp... See More ⇒
Detailed specifications: RXT2907A , S1015 , S1815 , S2000N , S2055N , S2SA1774G , S2SC4617G , S-L2SA2030M3T5G , S9014 , UD2195 , UMF21N , UMF5N , BCR108F , BCR112W , BCR116S , BCR119F , BCR119W .
History: S2000N
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