UMF21N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: UMF21N
Código: F21
Material: Si
Polaridad de transistor: NPN*PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15 W
Tensión colector-base (Vcb): 15 V
Tensión colector-emisor (Vce): 12 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 260 MHz
Capacitancia de salida (Cc): 6.5 pF
Ganancia de corriente contínua (hfe): 270
Paquete / Cubierta: SOT-363
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UMF21N Datasheet (PDF)
umf21n.pdf

UMF21N Power management (dual transistors) DESCRIPTION Silicon epitaxial planar transistor SOT-363 FEATURES 2SA2018 and DTC114E are housed independently in a package. Power switching circuit in a single package. 1 Mounting cost and area can be cut in half. APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile p
chumf21gp.pdf

CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHUMF21GPPower Management (Dual Transistor)Tr1:VOLTAGE 12 Volts CURRENT 0.5 AmpereDTr2:VOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Power management circuitFEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* Power switching circuit in a single package.* Mounting cost and area can be cut in half.* Both the 2SA201
Otros transistores... S1815 , S2000N , S2055N , S2SA1774G , S2SC4617G , S-L2SA2030M3T5G , S-L2SC3837T1G , UD2195 , TIP31C , UMF5N , BCR108F , BCR112W , BCR116S , BCR119F , BCR119W , BCR129 , BCR129S .



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