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UMF21N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: UMF21N

Código: F21

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.15 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 12 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 260 MHz

Capacitancia de salida (Cc): 6.5 pF

Ganancia de corriente contínua (hfe): 270

Empaquetado / Estuche: SOT-363

Búsqueda de reemplazo de transistor bipolar UMF21N

 

 

UMF21N Datasheet (PDF)

1.1. umf21n.pdf Size:591K _upd

UMF21N
UMF21N

UMF21N Power management (dual transistors) DESCRIPTION Silicon epitaxial planar transistor SOT-363 FEATURES 2SA2018 and DTC114E are housed independently in a package. Power switching circuit in a single package. 1 Mounting cost and area can be cut in half. APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile p

1.2. umf21n.pdf Size:1195K _htsemi

UMF21N
UMF21N

UMF21N Power management (dual transistors) DESCRIPTION Silicon epitaxial planar transistor SOT-363 FEATURES 2SA2018 and DTC114E are housed independently in a package. Power switching circuit in a single package. 1 Mounting cost and area can be cut in half. APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile phon

 5.1. chumf21gp.pdf Size:135K _upd

UMF21N
UMF21N

CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT CHUMF21GP Power Management (Dual Transistor) Tr1:VOLTAGE 12 Volts CURRENT 0.5 Ampere DTr2:VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Power management circuit FEATURE * Small surface mounting type. (SC-88/SOT-363) SC-88/SOT-363 * Power switching circuit in a single package. * Mounting cost and area can be cut in half. * Both the 2SA201

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