BCR112W Todos los transistores

 

BCR112W Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCR112W
   Código: WFs
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 4.7 kOhm
   Resistencia Base-Emisor R2 = 4.7 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 140 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SOT-323
 

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BCR112W datasheet

 ..1. Size:34K  siemens
bcr112w.pdf pdf_icon

BCR112W

BCR 112W NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 112W WFs Q62702-C2284 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-b

 ..2. Size:834K  infineon
bcr112w.pdf pdf_icon

BCR112W

BCR112... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR112 BCR112W C 3 R1 R2 1 2 B E EHA07184 Type Marking Pin Configuration Package BCR112 WFs 1=B 2=E 3=C - - - SOT23 BCR112W WFs 1=B 2=E 3=C - - - S

 8.1. Size:35K  siemens
bcr112.pdf pdf_icon

BCR112W

BCR 112 NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 112 WFs Q62702-C2254 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base

 9.1. Size:34K  siemens
bcr119.pdf pdf_icon

BCR112W

BCR 119 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 119 WKs Q62702-C2255 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEB

Otros transistores... S2SA1774G , S2SC4617G , S-L2SA2030M3T5G , S-L2SC3837T1G , UD2195 , UMF21N , UMF5N , BCR108F , MJE340 , BCR116S , BCR119F , BCR119W , BCR129 , BCR129S , BCR129W , BCR148F , BCR169W .

History: RN49A4FE

 

 

 


 
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