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BCR112W Specs and Replacement


   Type Designator: BCR112W
   SMD Transistor Code: WFs
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 140 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: SOT-323

 BCR112W Transistor Equivalent Substitute - Cross-Reference Search

   

BCR112W detailed specifications

 ..1. Size:34K  siemens
bcr112w.pdf pdf_icon

BCR112W

BCR 112W NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 112W WFs Q62702-C2284 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-b... See More ⇒

 ..2. Size:834K  infineon
bcr112w.pdf pdf_icon

BCR112W

BCR112... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR112 BCR112W C 3 R1 R2 1 2 B E EHA07184 Type Marking Pin Configuration Package BCR112 WFs 1=B 2=E 3=C - - - SOT23 BCR112W WFs 1=B 2=E 3=C - - - S... See More ⇒

 8.1. Size:35K  siemens
bcr112.pdf pdf_icon

BCR112W

BCR 112 NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 112 WFs Q62702-C2254 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base... See More ⇒

 9.1. Size:34K  siemens
bcr119.pdf pdf_icon

BCR112W

BCR 119 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 119 WKs Q62702-C2255 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEB... See More ⇒

Detailed specifications: S2SA1774G , S2SC4617G , S-L2SA2030M3T5G , S-L2SC3837T1G , UD2195 , UMF21N , UMF5N , BCR108F , MJE340 , BCR116S , BCR119F , BCR119W , BCR129 , BCR129S , BCR129W , BCR148F , BCR169W .

History: TP706 | 2SD865 | KT819VM | 2SC566

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