BCR112W datasheet, аналоги, основные параметры
Наименование производителя: BCR112W 📄📄
Маркировка: WFs
Тип материала: Si
Полярность: Pre-Biased-NPN
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 1
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 140 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: SOT-323
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Аналоги (замена) для BCR112W
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BCR112W даташит
..1. Size:34K siemens
bcr112w.pdf 
BCR 112W NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 112W WFs Q62702-C2284 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-b
..2. Size:834K infineon
bcr112w.pdf 
BCR112... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Pb-free (RoHS compliant) package Qualified according AEC Q101 BCR112 BCR112W C 3 R1 R2 1 2 B E EHA07184 Type Marking Pin Configuration Package BCR112 WFs 1=B 2=E 3=C - - - SOT23 BCR112W WFs 1=B 2=E 3=C - - - S
8.1. Size:35K siemens
bcr112.pdf 
BCR 112 NPN Silicon Digital Transistor Switching circuit, inverter, inferface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 112 WFs Q62702-C2254 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base
9.1. Size:34K siemens
bcr119.pdf 
BCR 119 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 119 WKs Q62702-C2255 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage VEB
9.2. Size:35K siemens
bcr116.pdf 
BCR 116 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 116 WGs Q62702-C2337 1 = B 2 = E 3 = C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base
9.3. Size:34K siemens
bcr119w.pdf 
BCR 119W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 119W WKs Q62702-C2285 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-base voltage
9.4. Size:34K siemens
bcr116w.pdf 
BCR 116W NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k , R2=47k ) Type Marking Ordering Code Pin Configuration Package BCR 116W WGs UPON INQUIRY 1 = B 2 = E 3 = C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCEO 50 V Collector-base voltage VCBO 50 Emitter-ba
9.5. Size:42K siemens
bcr119s.pdf 
BCR 119S NPN Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in one package Built bias resistor (R1=4.7k ) Type Marking Ordering Code Pin Configuration Package BCR 119S WKs Q62702-C2415 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Values Unit Collecto
9.6. Size:250K infineon
bcr119w.pdf 
BCR119... NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k ) BCR119S Two internally isolated transistors with good matching in one multichip package BCR119S For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BCR
9.7. Size:865K infineon
bcr116s.pdf 
BCR116... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7 k , R2=47 k ) BCR116S Two internally isolated transistors with good matching in one multichip package BCR116S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified accordin
9.8. Size:250K infineon
bcr119f.pdf 
BCR119... NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k ) BCR119S Two internally isolated transistors with good matching in one multichip package BCR119S For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BCR
9.9. Size:253K infineon
bcr119series.pdf 
BCR119... NPN silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in resistor (R1=4.7 k ) BCR119S Two internally isolated transistors with good matching in one multichip package BCR119S For orientation in reel see package information below Pb-free (RoHS compliant) package1) Qualified according AEC Q101 BCR
9.10. Size:867K infineon
bcr116 bcr116s bcr116w.pdf 
BCR116... NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7 k , R2=47 k ) BCR116S Two internally isolated transistors with good matching in one multichip package BCR116S For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified accordin
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