BCR169W Todos los transistores

 

BCR169W . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BCR169W
   Código: WS_WSs
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.25 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 3 pF
   Ganancia de corriente contínua (hfe): 120
   Paquete / Cubierta: SOT-323

 Búsqueda de reemplazo de transistor bipolar BCR169W

 

BCR169W Datasheet (PDF)

 ..1. Size:34K  siemens
bcr169w.pdf

BCR169W
BCR169W

BCR 169WPNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 169W WSs UPON INQUIRY 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltag

 ..2. Size:865K  infineon
bcr169w.pdf

BCR169W
BCR169W

BCR169...PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 k) BCR169S: Two internally isolated transistors with good matching in one multichip package BCR169S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101

 8.1. Size:34K  siemens
bcr169.pdf

BCR169W
BCR169W

BCR 169PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 169 WSs Q62702-C2340 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEBO 5

 8.2. Size:42K  siemens
bcr169s.pdf

BCR169W
BCR169W

BCR 169SPNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in one package Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 169S WSs UPON INQUIRY 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values UnitColle

 9.1. Size:35K  siemens
bcr166.pdf

BCR169W
BCR169W

BCR 166PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 166 WTs Q62702-C2339 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltag

 9.2. Size:35K  siemens
bcr162.pdf

BCR169W
BCR169W

BCR 162PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, drivere circuit Built in bias resistor (R1=4.7k, R2=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 162 WUs Q62702-C2378 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base volt

 9.3. Size:34K  siemens
bcr166w.pdf

BCR169W
BCR169W

BCR 166WPNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 166W WTs UPON INQUIRY 1=B 2=E 3=C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base vol

 9.4. Size:35K  siemens
bcr162w.pdf

BCR169W
BCR169W

BCR 162WPNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, drivere circuit Built in bias resistor (R1=4.7k, R2=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 162W WUs UPON INQUIRY 1=B 2=E 3=C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base v

 9.5. Size:116K  infineon
bcr166series.pdf

BCR169W
BCR169W

BCR166...PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 k , R2 = 47 k ) Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR166/FBCR166WC3R1R21 2B EEHA07183Type Marking Pin Configuration PackageBCR166 WTs 1=B 2=E 3=C - - - SOT23 BCR166F WTs 1=B 2=

 9.6. Size:153K  infineon
bcr162series.pdf

BCR169W
BCR169W

BCR162...PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7k , R2 = 4.7k ) Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR162/FC3R1R21 2B EEHA07183Type Marking Pin Configuration PackageBCR162 WUs 1=B 2=E 2=C - - - SOT23 BCR162F WUs 1=B 2=E 2=C - -

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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