Биполярный транзистор BCR169W - описание производителя. Основные параметры. Даташиты.
Наименование производителя: BCR169W
Маркировка: WS_WSs
Тип материала: Si
Полярность: Pre-Biased-PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Ёмкость коллекторного перехода (Cc): 3 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT-323
BCR169W Datasheet (PDF)
bcr169w.pdf
BCR 169WPNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 169W WSs UPON INQUIRY 1 = B 2 = E 3 = C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltag
bcr169w.pdf
BCR169...PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 k) BCR169S: Two internally isolated transistors with good matching in one multichip package BCR169S: For orientation in reel see package information below Pb-free (RoHS compliant) package Qualified according AEC Q101
bcr169.pdf
BCR 169PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 169 WSs Q62702-C2340 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltage VEBO 5
bcr169s.pdf
BCR 169SPNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated Transistors in one package Built in bias resistor (R1=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 169S WSs UPON INQUIRY 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363Maximum RatingsParameter Symbol Values UnitColle
bcr166.pdf
BCR 166PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 166 WTs Q62702-C2339 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base voltag
bcr162.pdf
BCR 162PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, drivere circuit Built in bias resistor (R1=4.7k, R2=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 162 WUs Q62702-C2378 1=B 2=E 3=C SOT-23Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base volt
bcr166w.pdf
BCR 166WPNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1=4.7k, R2=47k)Type Marking Ordering Code Pin Configuration PackageBCR 166W WTs UPON INQUIRY 1=B 2=E 3=C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base vol
bcr162w.pdf
BCR 162WPNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, drivere circuit Built in bias resistor (R1=4.7k, R2=4.7k)Type Marking Ordering Code Pin Configuration PackageBCR 162W WUs UPON INQUIRY 1=B 2=E 3=C SOT-323Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCEO 50 VCollector-base voltage VCBO 50Emitter-base v
bcr166series.pdf
BCR166...PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7 k , R2 = 47 k ) Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR166/FBCR166WC3R1R21 2B EEHA07183Type Marking Pin Configuration PackageBCR166 WTs 1=B 2=E 3=C - - - SOT23 BCR166F WTs 1=B 2=
bcr162series.pdf
BCR162...PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R1 = 4.7k , R2 = 4.7k ) Pb-free (RoHS compliant) package1) Qualified according AEC Q101BCR162/FC3R1R21 2B EEHA07183Type Marking Pin Configuration PackageBCR162 WUs 1=B 2=E 2=C - - - SOT23 BCR162F WUs 1=B 2=E 2=C - -
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050