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CHDTC363EKGP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CHDTC363EKGP
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 6.8 kOhm
   Resistencia Base-Emisor R2 = 6.8 kOhm
   Ratio típica de resistencia R1/R2 = 1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 10 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Ganancia de corriente contínua (hfe): 70
   Paquete / Cubierta: SOT-23
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CHDTC363EKGP Datasheet (PDF)

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CHDTC363EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23)SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi

 5.1. Size:138K  chenmko
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CHDTC363EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363EUGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 20 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-70/SOT-323)SC-70/SOT-323* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation

 6.1. Size:92K  chenmko
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CHDTC363EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC363TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

 8.1. Size:90K  chenmko
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CHDTC363EKGP

CHENMKO ENTERPRISE CO.,LTDCHDTC314TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 30 Volts CURRENT 600 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA

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History: CHT4126GP

 

 
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