CHDTC363EKGP Datasheet. Specs and Replacement

Type Designator: CHDTC363EKGP  📄📄 

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 6.8 kOhm

Built in Bias Resistor R2 = 6.8 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 200 MHz

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT-23

 CHDTC363EKGP Substitution

- BJT ⓘ Cross-Reference Search

 

CHDTC363EKGP datasheet

 ..1. Size:139K  chenmko

chdtc363ekgp.pdf pdf_icon

CHDTC363EKGP

CHENMKO ENTERPRISE CO.,LTD CHDTC363EKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabi... See More ⇒

 5.1. Size:138K  chenmko

chdtc363eugp.pdf pdf_icon

CHDTC363EKGP

CHENMKO ENTERPRISE CO.,LTD CHDTC363EUGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 20 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation ... See More ⇒

 6.1. Size:92K  chenmko

chdtc363tkgp.pdf pdf_icon

CHDTC363EKGP

CHENMKO ENTERPRISE CO.,LTD CHDTC363TKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA... See More ⇒

 8.1. Size:90K  chenmko

chdtc314tkgp.pdf pdf_icon

CHDTC363EKGP

CHENMKO ENTERPRISE CO.,LTD CHDTC314TKGP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 30 Volts CURRENT 600 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation(VCE(sat)=40mV at IC/IB=50mA/2.5mA... See More ⇒

Detailed specifications: CHDTC144VUGP, CHDTC144WEGP, CHDTC144WKGP, CHDTC144WUGP, CHDTC314TKGP, CHDTC314TUGP, CHDTC323TKGP, CHDTC323TUGP, C5198, CHDTC363EUGP, CHDTC363TKGP, CHDTC614TKGP, CHDTC614TUGP, CHDTC623TKGP, CHEMA11GP, CHEMA2GP, CHEMA3GP

Keywords - CHDTC363EKGP pdf specs

 CHDTC363EKGP cross reference

 CHDTC363EKGP equivalent finder

 CHDTC363EKGP pdf lookup

 CHDTC363EKGP substitution

 CHDTC363EKGP replacement