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DMC2610E . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMC2610E
   Código: R1
   Material: Si
   Polaridad de transistor: Pre-Biased-NPN
   Resistencia de Entrada Base R1 = 47 kOhm
   Resistencia Base-Emisor R2 = 22 kOhm
   Ratio típica de resistencia R1/R2 = 2.1

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 50 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 60
   Paquete / Cubierta: MINI5-G3-B
     - Selección de transistores por parámetros

 

DMC2610E Datasheet (PDF)

 ..1. Size:357K  panasonic
dmc2610e.pdf pdf_icon

DMC2610E

This product complies with the RoHS Directive (EU 2002/95/EC).DMC2610ESilicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2)

 7.1. Size:396K  fairchild semi
fdmc2610.pdf pdf_icon

DMC2610E

January 2007FDMC2610tmN-Channel UltraFET Trench MOSFET 200V, 9.5A, 200mFeatures General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 215m at VGS = 6V, ID = 1.5Aprocess. It has been optimized for power management Low Profile - 1mm max in a Pow

 7.2. Size:359K  panasonic
dmc26100.pdf pdf_icon

DMC2610E

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26100Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

 7.3. Size:356K  panasonic
dmc26106.pdf pdf_icon

DMC2610E

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26106Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

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History: FT008A | 2SC2452 | 2SD1873 | FHT9015O-ME | BFS91A | TTB1020B | MJ3771

 

 
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